ZETEX bzv61, bzv62 Technical data
BZV61 / BZV62
Silicon Power Zener Diode
Part no.
Description
The BZV61/62 are hermetically sealed 35Aforward current diodes, which are available in
different Zener voltages.
Features
• Forward current 35A
• Zener voltages 22V, 27V, 33V or 39V
• Hermetic press-fit package
• Available in different modifications of the
package
Pinout details
1
2
BZV61: 1 – cathode; 2 - anode
BZV62: 1 – anode; 2 - cathode
Applications
• Power supplies
• Rectifier diode in car alternators
Typical application circuit
exciting current
+ -
3 x BZV61 3x BZV62
Alternator
Ordering information
Device Quantity per box Options
BZV61-22; …; BZV61-39 500
BZV62-22; …; BZV62-39 500
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BZV61- black, BZV62 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BZV61………………………………... diode type
22………………………….……….. Zener voltage V
Issue 2 – August 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
(in V) 22
Z
BZV61 / BZV62
Absolute maximum ratings (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Unit Test condition
BZV61-22 BZV62-22 7.2
Z-current
(continuous)
BZV61-27 BZV62-27 5.8
BZV61-33 BZV62-33 4.8
BZV61-39 BZV62-39
Mean forward current I
Surge forward current I
Maximum rated value
Repetitive peak forward current
I
FRM
Effective forward current I
I
Z
F(AV)
FSM
∫i²dt
=π*I
F(RMS)
F(AV)
A T
= 25°C
c
4.2
35 A
600
A
500
1800
A²s
1250
sinusoidal,
f = 15 - 1000 Hz
= 25°C,
T
J
half-sine wave,
≤ 10 ms
T
= 175°C,
J
half-sine wave,
≤ 10 ms
T
= 25°C,
J
half-sine wave,
≤ 10 ms
T
= 175°C,
J
half-sine wave,
≤ 10 ms
110 A f = 15 - 1000 Hz
55 A
sinusoidal,
f = 15 - 1000 Hz
Junction temperature T
Storage temperature range T
Jmax
stg
175 °C
- 50 to + 150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to case R
θJC
0.8 °C/W
Issue 2 – August 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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