ZETEX BCW66 Technical data
查询BCW66FR供应商
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS –
BCW66F – EF BCW66FR – 7P
BCW66G – EG BCW66GR – 5T
BCW66H – EH BCW66HR – 7M
COMPLEMENTARY TYPE – BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Collector Current(10ms) I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
BCW66
C
SOT23
75 V
45 V
5V
800 mA
1000 mA
100 mA
330 mW
-55 to +150 °C
E
B
TBA
BCW66
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage V
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Static
BCW66F h
Forward
Current
Transfer
BCW66G h
BCW66H h
Transition Frequency f
Output Capacitance C
Input Capacitance C
Noise Figure N 2 10 dB I
V
(BR)CEO
V
(BR)CES
(BR)EBO
I
CES
EBO
V
CE(sat)
BE(sat)
FE
FE
FE
T
obo
ibo
45 V I
75 V
5V
20
nA
20
µA
20 nA V
0.3
0.7VV
=10mA
CEO
IC=10
µA
=10µA
I
EBO
= 45V
V
CES
= 45V , T
V
CES
EBO
amb
=4V
IC=100mA, IB = 10mA
I
= 500mA, IB = 50mA*
C
2VIC=500mA, IB=50mA*
75
100
35 160 250
110
160
250 400
60
180
250
350 630
100
IC= 10mA, V
= 1V
=100mA, VCE= 1V*
I
C
I
=500mA, VCE = 2V*
C
IC= 10mA, V
= 1V
=100mA, VCE = 1V*
I
C
I
=500mA, VCE = 2V*
C
IC= 10mA, V
= 1V
=100mA, VCE = 1V*
I
C
I
=500mA, VCE = 2V*
C
100 MHz IC =20mA, VCE =10V
f = 100MHz
8 12pFVCB =10V, f =1MHz
80 pF VEB =0.5V, f =1MHz
= 0.2mA, VCE = 5V
C
=1kΩ
R
G
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400nsns
IC=150mA
I
=- IB2 =15mA
B1
R
=150Ω
L
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
=150°C
CE
CE
CE
TBA
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