ZETEX BC817 Technical data

查询BC81716供应商

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 5 – MARCH 2001 ✪

PARTMARKING DETAILS

BC81716 – 6AZ
BC81725 – 6BZ
BC81740 – 6CZ

BC817

C

E

COMPLEMENTARY TYPE – BC807

B

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Peak Base Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

CM

C

B

BM

tot

j:Tstg

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off

Current
Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Saturation Voltage
Static Forward Current

Transfer Ratio

I

CBO

EBO

V

CE(sat)

V

BE(on)

h

FE

µA
µA

µA

V

CB

V

CB

V

EB

0.1
5

10
700 mV IC=500mA, IB=50mA*

1.2 V IC=500mA, VCE=1V*

BC81716 100 250 IC=100mA, VCE=1V*
BC81725 160 400 I

BC81740 250 600 I
All bands 40 I
Transition Frequency f

Output Capacitance C

T

obo

200 MHz IC=10mA, VCE=5V

5.0 pF VCB=10V, f=1MHz

C

C

C

f=35MHz

*Measured under pulsed conditions.

50 V
45 V

5V

1A
500 mA
100 mA
200 mA
330 mW

-55 to +150 °C

=20V, IE=0
=20V, IE=0, T

amb

=5V, IC=0

=100mA, VCE=1V*
=100mA, VCE=1V*
=500mA, VCE=1V*

=150°C

TBA