ZETEX BC807 Technical data
查询BC80716-5AZ供应商
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 – 5AZ
BC80725 – 5BZ
BC80740 – 5CZ
COMPLEMENTARY TYPE BC817
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Peak Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
BM
tot
j:Tstg
BC807
C
B
SOT23
-50 V
-45 V
-5 V
-1 A
-500 mA
-100 mA
-200 mA
330 mW
-55 to +150 °C
E
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
-0.1
-0.5
-10
-700 mV IC=-500mA, IB=-50mA*
-1.2 V IC=-500mA, VCE=-1V*
µA
µA
V
=-20V, IE=0
CB
V
=-20V, IE=0, T
CB
V
=-5V, IC=0
EB
BC80716 100 250 IC=-100mA, VCE=-1V*
BC80725 160 400 I
BC80740 250 600 I
All bands 40 I
Transition Frequency f
Output Capacitance C
T
obo
100 MHz IC=-10mA, VCE=-5V
8.0 pF VCB=-10V f=1MHz
=-100mA, VCE=-1V*
C
=-100mA, VCE=-1V*
C
=-500mA, VCE=-1V*
C
f=35MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
amb
=150°C
tba
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