ZARLINK SL2150D DATA SHEET

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SL2150D
Cable Tuner Front End LNA with AGC
Data Sheet
Features
Single chip dual output LNA
Wide dynamic range on both channels
Independent AGC facility incorporated into all channel paths
Independent disable facility incorporated into all channel paths
Full ESD protection. (Normal ESD handling procedures should be observed)
Applications
Multi-tuner cable set top box and cable modem applications
Data communications systems
Terrestrial TV tuner loop though
September 2005
Ordering Information
SL2150D/KG/LH1S 28 Pin QFN Tubes SL2150D/KG/LH2R 28 Pin QFN* Trays SL2150D/KG/LH2T 28 Pin QFN* Tape & Reel
*Pb Free Matte Tin
-20°C to +85°C
Description
The SL2150D is a wide dynamic range front end for tuner applications.
The device offers two buffered outputs from a single input, where both paths contain an independently controllable AGC and disable facility.
RFINPUT
RFINPUTB
AGC1 AGC2
AGC
Control
Power
Splitter
AGC
Control
Power Down
DIS1 DIS2
Figure 1 - SL2150D Block Diagram
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Copyright 2002-2005, Zarlink Semiconductor Inc. All Rights Reserved.
RFOUT1
RFOUT1B
RFOUT2 RFOUT2B
SL2150D Data Sheet
Vcc
Vcc
NC#
NC#
NC#
Vcc
Vcc
RFOUT1
RFOUT1B
VEE
(PACKAGE
PADDLE)
Vee Vee
SL2150D Vcc Vcc Vcc
# Pins marked NC should be connected to Vee
1
Vcc
Vcc
RF INPUT
RF INPUT
Vee
DIS1
DIS2
Vee Vee RFOUT2 RFOUT2B NC# AGC2 AGC1
LH28
Figure 2 - Pin Allocation
1.0 Quick Reference Data
NB all data applies with differential termination and single ended source both of 75 Ω.
Characteristics Units
RF input operating range 50-860 MHz Gain with external load as in Figure 11
maximum minimum
11
-25 Input NF, both paths enabled at maximum gain 6.4 dB CTB, both paths enabled, all gain settings * -66 dBc CSO, both paths enabled, all gain settings * -64 dBc CXM, both paths enabled, all gain settings * -60 dBc Input impedance 75 Input VSWR 8 dB Output impedance differential, all loops
440
(requires external load for example as in Figure 11) Input to output isolation (both outputs) 30 dB Output to output isolation 25 dB
Table 1 - Reference Data
*132 channel matrix at +15 dBmV per channel, 75 source impedance
dB
dB
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
2.0 Functional Description
The SL2150D is a broadband wide dynamic range dual output tuner front en d LNA with AGC. It also has application is any system where a wide dynamic range broadband power splitter is required.
The pin assignment is contained in Figure 2 and the block diagram in Figure 1.The port internal peripheral circuits are contained in Figure 14.
In normal application the RF input is interfaced to the device input. The input preamplifier is designed for low noise figure, within the operating region of 50 to 860 MHz and for high intermodulation distortion intercept so offering good signal to noise plus composite distortion spurious performance when loaded with a multi carrier system. The preamplifier also provides an impedance match to a 75 source; the typical impedance is shown in Figure 4.
The input NF is shown in Figure 6. The output of the preamplifier is then power split to two independently controlled AGC stages. Each AGC stage
provides for a minimum of 30 dB of gain control across the input frequency range. The typical AGC characteristic and NF versus gain setting are contained in Figure 5 and Figure 7 respectively.
Finally each of the AGC stages drive an output buffer of differential output impedance of 440 , which provides a nominal 11 dB of gain when terminated into a differential 75 load, as in Figure 11. Each channel AGC and output buffer can be independently powered down.
In application it is important to avoid saturation of the output stage, therefore it is recommended that the output standing current be sunk to Vcc through an inductor. A resistive pull up can also be used as shown in Figure 13 ­"Example Application Driving 100 W Load with Resistive Pull Up", however the resistor values should not exceed 20 ohm single ended.
If an inductive current sink is used the maximum available gain from the device is circa 26 dB. This gain can be reduced by application of an external load between the differential output ports. The gain can be approximately calculated from the following formula:
- GAIN = 20*log ((Parallel combination of 440 ohm and external load between ports)/22 ohm)+2 dB
For example when driving a 100 ohm load as in Figure 12, the gain equals
- GAIN = 20 *log ((440 *100)/(440+100)/22)+2 dB =12 dB.
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
F TYPE
RFIN
CH1 S11 1 U FS
PRm
Cor
Avg 16 Smo
Z
0 75
5.1nH
1nF
3
RF INPUT
SL2150D
1nF
4
RF INPUTB
MABAES0029
1:1
Figure 3 - Input Network
4_: 133.23 55.758 10.44 nH
16 Nov 2001 10:10:47
850.000 000 MHz
4
1_: 169.02
-44.117
2_: 49.916
-57.436 250 MHz
3_: 31.238
-5.5576 500 MHz
50 MHz
Ω Ω
Ω Ω
Ω Ω
3
2
START 50.000 000 MHz STOP 850.000 000 MHz
1
Figure 4 - Typical Single-end Input Impedance
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
Typical AGC vs Control Voltage
15
5
-5
-15
-25
Gain (dB)
-35
-45
-55
-65
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Figure 5 - Typical AGC Characteristic
AGC Voltage (V)
Typical Noise Figure vs Frequency (Vagc = 3 V, Maximum Gain)
9
8.5
8
7.5
7
6.5
NF(dB)
6
5.5 5
4.5 4
50 150 250 350 450 550 650 750 850
Frequency (MHz)
Figure 6 - Input Noise Figure at 25°C
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
Typical Variation in Noise Figure vs. Gain Setting
20
18
16
14
12
Noise Figure (dB)
10
8
6
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 Gain (dB)
Figure 7 - Typical Variation in NF versus Gain Setting
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
132 channel matrix, 75 ohm source, all channels at +15 dBmV. Input and output conditions as in Fig. 3 and Fig. 12.
-50
-60
CSO,CTB (dBS)
-70
CSO (dBC) CTB (dBC)
-80
-20-15-10-50
Figure 8 - Typical Variation In CSO and CTB Versus Backoff from Maximum Gain
50
Driven
output
stage
Monitored
output
stage
C
D
C
D
Directional coupler phase relationship
AB C0 0 D180 0
Directional
coupler
Directional
coupler
A
B
A
B
50
Port 1
Network
Analyzer
Port 2
Figure 9 - Test Condition for Output Crosstalk
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Driven output
stage
SL2150D Data Sheet
50
C
Directional
D
coupler
A
B
Port 1
SL2150D
Monitored
input stage
Directional coupler phase relationship
AB C0 0 D180 0
Network
Analyzer
Port 2
Figure 10 - Test Condition for Output to Input Crosstalk
Vcc
100nF 100pF
MABAES0029
1:1
To 75 load
1nF
Figure 11 - Example Application Driving 75 Load
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FTYPE
SL2150D Data Sheet
10 µH10µH
Vcc
1nF
SL2150D
1nF
100
Figure 12 - Example Application Driving 100 Load with Inductive Pull Up
Vcc
2x 20
1nF
SL2150D
100
Note: External resistor
values must not exceed 20
1nF
Figure 13 - Example Application Driving 100 Load with Resistive Pull Up
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
Vcc
440
3.9 V
32 mA 32 mA
Output Ports
1.6 V
440
Output
30 k
INPUT
2.5 V
2.5 V
1 k
270
1 k
AGC INPUT
INPUT
DECOUPLED
RF Input Port
20 k
1.5 V
AGC INPUT
1.5 k
AGC Port
1.7 k
DIS Port
Figure 14 - Port Peripheral Circuitry
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
3.0 Electrical Characteristics
Test conditions (unless otherwise stated). T
=-20o to 85oC, Vee=0V, Vcc=5V+-5%
amb
These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply voltage unless otherwise stated.
Electrical Characteristics
Characteristic Pin Min. Typ. Max. Units Conditions
Supply current 190
110
42
Input frequency range
Input impedance 3, 4 75 See Figure 4 Input return loss 6.8 8 dB See Figure 4 Input Noise
Figure
Variation in NF with gain adjust
Gain
maximum minimum minimum
50 860 MHz
6.4 7.2 dB Tamb = 27°C,
9.5 11
-50
220 140
60
-1 dB/dB See Figure 7
12.5
-25
mA mA mA
dB dB dB
Both outputs enabled One output enabled Both outputs disabled
see Figure 6 All loops at maximum gain
Power gain from 75 single ended source to differential 75 Ω load, with application as in Figure 11. Vagcip = 3.0 V Vagcip = 0.5 V Vagcip = Vee AGC monotonic from Vee to Vcc. Refer to Functional description section for information on calculating maximum gain with other load conditions
CSO -66
-62
CTB -65
-62 CXM -60 dBc See note (2) Input P1dB +4.5 dBm All gain settings, with
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Zarlink Semiconductor Inc.
dBc dBc
dBc dBc
See note (2) See note (3)
See note (2) See note (3)
load as in Figure 11
SL2150D Data Sheet
Electrical Characteristics (continued)
Characteristic Pin Min. Typ. Max. Units Conditions
Gain variation within channel
Output impedance
Output port DC standing current
AGC1, 2 input leakage current
DIS1, 2 input Input high voltage Input low voltage Leakage current
Crosstalk between outputs
0.25 dB Channel bandwidth 8 MHz within operating frequency range, all loops, all gain settings
11,12,
440 Differential
24,25
11,12,
24,25
50 mA Standing current that
any external load has to sustain.
8,9 -200 200 µA Vagcip = Vee to Vcc
6, 7
2.8
Vee
-200
Vcc
0.8
200
V V
µA
Output disabled Output enabled DIS1, 2 = Vee to Vcc
-25 dB All gain settings, measured differential output to differential output, driven ports in phase and monitored ports out of phase, see Figure 9
Crosstalk between outputs and RF input
-30 dB All gain settings, measured differential output to single ended input, driven ports in phase, see Figure 10
Note 1: All power levels are referred to 75 Note 2: Load as in Figure 11and Figure 12, at maximum gain, 132 channel matrix, 75 ohm source with all channels at +15 dBmV,
Note 3: Load as in Figure 11 and Figure 12, all gain settings, 132 channel matrix, 75 ohm source with all channels at +15 dBmV,
assuming power match. assuming power match.
, and 0 dBm = 109 dBµV.
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Zarlink Semiconductor Inc.
SL2150D Data Sheet
Absolute Maximum Ratings All voltages are referred to Vee at 0V
Characteristic Min. Max. Units Conditions
Supply voltage -0.3 6 V RF input voltage 8 dBm Differential All I/O port DC offsets -0.3 Vcc+0.3 V Storage temperature -55 150 Junction temperature 125 Package thermal resistance, chip to
35
ambient Power consumption at 5.25 V 1155 mW ESD protection 1.5 kV Mil-std 883B method 3015 cat1
o
C
o
C Power applied
o
C/W Paddle to be soldered to
ground plane
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4.0 Application Diagram
SL2150D Data Sheet
Figure 15 - SL2150D Evaluation PCB Schematic
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Note: Baluns are only required to interface to 75/50 ohm test equipment.
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Copyright Zarlink Semiconductor Inc. All Rights Reserved.
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