XILINX XQV1000-4BG560N, XQV100-4PQ240N, XQV100-4CB228M, XQV100-4BG256N, XQV600-4HQ240N Datasheet

...
DS002 (v1.5) December 5, 2001
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Preliminary Product Specification
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© 2001 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at
http://www.xilinx.com/legal.htm
.
7
Features
Certified to MIL-PRF-38535 (Qualified Manufacturer Listing)
Guaranteed over the full military temperature range (–55°C to +125°C)
Ceramic and Plastic Packages
Fast, high-density Field-Programmable Gate Arrays
- Densities from 100K to 1M system gates
- System performance up to 200 MHz
- Hot-swappable for Compact PCI
Multi-standard SelectI/O™ int erfaces
- 16 high-performance interface standards
- Connects directly to ZBTRAM devices
Built-in clock-management circuitry
- Four dedicated delay-locked loops (DLLs) for
advanced clock control
- Four primary low-skew global clock distribution
nets, plus 24 secondary global nets
Hierarchical memory system
- LUTs configurable as 16-bit RAM, 32-bit RAM,
16-bit dual-ported RAM, or 16-bit Shift Register
- Configurable synchronous dual-ported 4K-bit
RAMs
- Fast interfaces to external high-performance RAMs
Flexible architecture that balances speed and density
- Dedicated carry logic for high-speed arithmetic
- Dedicated multiplier support
- Cascade chain for wide-input functions
- Abundant registers/latches with clock enable, and
dual synchronous/asynchronous set and reset
- Internal 3-state bussing
- IEEE 1149.1 boundary-scan logic
- Die-temperatur e se ns ing device
Supported by FPGA Foundation™ and Alliance Development Systems
- Complete support for Unified Libraries, Relationally
Placed Macros, and Design Manager
- Wide selection of PC and workstation platforms
SRAM-based in-system configuration
- Unlimited reprogrammability
- Four programming modes
•0.22 µm 5-la yer metal process
100% factory tested
Available to Standard Microcircuit Drawings
- 5962-99572 for XQV300
- 5962-99573 for XQV600
- 5962-99574 for XQV1000
- Contact Defense Supply Center Columbus (DSCC) for more information at
http://www.dscc.dla.mil
Description
The QPro™ Virtex™ FPGA family delivers high-perfor­mance, high-capacity programmable logic solutions. Dra­matic increases in silicon efficiency result from optimizing the new architecture for place-and-route efficiency and exploiting an aggressive 5-layer-metal 0.22 µm CMOS pro­cess. These advances make QPro Virtex FPGAs powerful and flexible alternatives to mask-programmed ga te arrays. The Virtex family comprises the four members shown in
Table 1.
Building on experience gained from previous generations of FPGAs, the Virtex family represents a revolutionary step forward in programmable logic design. Combining a wide variety of programmable system features, a rich hierarchy of fast, flexible interconnect resources, and advanced process technology, the QPro Virtex family delivers a high-speed and high-capacity programmable logic solution that enhances design flexibility while reducing time-to-market.
Refer to the “Virtex™ 2.5V Field Programmable Gate
Arrays” commercial data sheet for more information on
device architecture and timing specifications.
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Preliminary Product Specification
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QPro Virtex 2.5V QML High-Reliability FPGAs
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DS002 (v1.5) December 5, 2001
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Preliminary Product Specification
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Virtex Electrical Characteristics
Based on preliminary characterization. Further changes are not expected. All specifications are representative of worst-case supply voltage and junction temperature conditions. The parameters
included are common to popula r designs and typical applica tions. Contact the factory for design considerations requi ring more detailed information.
Virtex DC Characteristics
Absolute Maximum Ratings
Table 1:
QPro Virtex Field-Programmable Gate Array Fa mily Members
Device System Gates CLB Array Logic Cells
Maximum
Available I/O Block RAM Bits
Max Select
RAM Bits
XQV100 108,904 20 x 30 2,700 180 40,960 38,400 XQV300 322,970 32 x 48 6,912 316 65,536 98,304 XQV600 661,111 48 x 72 15,552 316 98,304 221,184
XQV1000 1,124,022 64 x 96 27,648 404 131,072 393,216
Symbol Description Min/Max Units
V
CCINT
Supply voltage relative to GND –0.5 to 3.0 V
V
CCO
Supply voltage relative to GND –0.5 to 4.0 V
V
REF
Input reference Voltage –0.5 to 3.6 V
V
IN
(3)
Input voltage relative to GND Using V
REF
–0.5 to 3.6 V
Internal threshold –0.5 to 5.5 V
V
TS
Voltage applied to 3-state output –0.5 to 5.5 V
V
CC
Longest supply voltage rise time from 1V to 2.375V 50 ms
T
STG
Storage temperature (ambient) –65 to +150
°
C
T
J
Junction temperature Ceramic packages +150
°
C
Plastic packages +125
°
C
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional op er ation of the device at these or any other cond iti ons b eyond those listed under Oper a tin g C o ndi tions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.
2. Power supplies may turn on in any order.
3. For protracted periods (e.g., longer than a day), V
IN
should not exceed V
CCO
by more that 3.6V.
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Preliminary Product Specification
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Recommended Operating Conditions
DC Characteristics Over Recommended Operating Conditions
Symbol Description Min Max Units
V
CCINT
Supply voltage relative to GND, TC = –55°C to +125°C Ceramic packages 2.5 – 5% 2.5 + 5% V Supply voltage relative to GND, T
J
= –55°C to +125°C Plastic packages 2.5 – 5% 2.5 + 5% V
V
CCO
Supply voltage relative to GND, TC = –55°C to +125°C Ceramic packages 1.2 3.6 V Supply voltage relative to GND, T
J
= –55°C to +125°C Plastic packages 1.2 3.6 V
T
IN
Input signal transition time - 250 ns
T
IC
Initialization Temperature Range
(4)
XQVR300 –55 +125
°
C
XQVR600 –55 +125
°
C
XQVR1000 –40 +125
°
C
T
OC
Operational Temperature Range
(5)
XQVR300 –55 +125
°
C
XQVR600 –55 +125
°
C
XQVR1000 –55 +125
°
C
Notes:
1. Correct operation is guar an teed with a min imu m V
CCINT
of 2.25V (Nominal V
CCINT
– 10%). Below the m inim um v alue stated abo v e,
all delay parameters increase by 3% for each 50 mV reduction in V
CCINT
below the specified range.
2. At junction temperatures above those listed as Operating Conditions, all delay parameters increase by 0.35% per
°
C.
3. Input and output measurement threshold is ~50% of V
CC
.
4. Initialization occurs from the moment of V
CC
ramp-up to the rising transition of the INIT pin.
5. The device is operational after the INIT pin has transitioned high.
Symbol Description Device Min Max Units
V
DRINT
Data retention V
CCINT
voltage
(below which configuration data may be lost)
All 2.0 - V
V
DRIO
Data retention V
CCO
voltage
(below which configuration data may be lost)
All 1.2 - V
I
CCINTQ
Quiescent V
CCINT
supply current
(1)
XQV100 - 50 mA XQV300 - 75 mA XQV600 - 100 mA
XQV1000 - 100 mA
I
CCOQ
Quiescent V
CCINT
supply current
(1)
XQV100 - 2 mA XQV300 - 2 mA XQV600 - 2 mA
XQV1000 - 2 mA
I
REF
V
REF
current per V
REF
pin - - 20
µ
A
I
L
Input or output leakage current - –10 +10
µ
A
C
IN
Input capacitance (sample tested) - - 8 pF
I
RPU
Pad pull-up (when selected) at VIN = 0V, V
CCO
= 3.3V (sample tested) -
(2)
0.25 mA
I
RPD
Pad pull-down (when selected) at VIN = 3.6V (sample tested) -
(2)
0.15 mA
Notes:
1. With no output current loads, no active input pull-up resistors, all I/O pins in a High-Z state and floating.
2. Internal pull-up and pull-down res istors guar antee v alid logic le v els at unconn ected input pins . These pull -up and pull-do wn resistors do not guarantee valid logic levels when input pins are connected to other circuits.
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Preliminary Product Specification
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DC Input and Output Levels
Values fo r VIL and VIH are recommended input voltages. Va lues for I
OL
and IOH are guaranteed output currents over
the recommended operating con di tio ns at the V
OL
and V
OH
test points. Only selec ted standards a re tested. Thes e are
chosen to ensure that all standards meet their specifica­tions. The selected standa rds a re tested at min imum V
CCO
with the respective VOL and VOH voltage levels shown. Other standards are sample tested.
Input/Output
Standard
V
IL
V
IH
V
OL
V
OH
I
OL
I
OH
V, min V, max V, min V, max V, max V, min mA mA
LVTTL
(1)
–0.5 0.8 2.0 5.5 0.4 2.4 24 –24 LVCMOS2 –0.5 0.7 1.7 5.5 0.4 1.9 12 –12 PCI, 3.3V –0.5 44% V
CCINT
60% V
CCINTVCCO
+ 0.5 10% V
CCO
90% V
CCO
(2) (2)
PCI, 5.0V –0.5 0.8 2.0 5.5 0.55 2.4
(2) (2)
GTL –0.5 V
REF
– 0.05 V
REF
+ 0.05 3.6 0.4 n/a 40 n/a
GTL+ –0.5 V
REF
– 0.1 V
REF
+ 0.1 3.6 0.6 n/a 36 n/a
HSTL I –0.5 V
REF
– 0.1 V
REF
+ 0.1 3.6 0.4 V
CCO
– 0.4 8 -8
HSTL III –0.5 V
REF
– 0.1 V
REF
+ 0.1 3.6 0.4 V
CCO
– 0.4 24 –8
HSTL IV –0.5 V
REF
– 0.1 V
REF
+ 0.1 3.6 0.4 V
CCO
– 0.4 48 –8
SSTL3 I –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 V
REF
– 0.6 V
REF
+ 0.6 8 –8
SSTL3 II –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 V
REF
– 0.8 V
REF
+ 0.8 16 –16
SSTL2 I –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 V
REF
– 0.65 V
REF
+ 0.65 7.6 –7.6
SSTL2 II –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 V
REF
– 0.80 V
REF
+ 0.80 15.2 –15.2
CTT –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 V
REF
– 0.4 V
REF
+ 0.4 8 –8
AGP –0.5 V
REF
– 0.2 V
REF
+ 0.2 3.6 10% V
CCO
90% V
CCO
(2) (2)
Notes:
1. V
OL
and VOH for lower drive currents are sample tested.
2. Tested according to the relevant specifications.
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Preliminary Product Specification
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Virtex Switching Characteristics
Testing of switching parameters is modeled after testing methods specified by MIL-M-38510/605. All devices are 100% functionally tested. Internal timing parameters are derived from measurin g internal test patter n s. Listed bel ow are representative values. For more specific, more precise, and worst-case guarante ed data, use the values repor ted
by the static timing analyzer (TRCE in the Xilinx Develop­ment System) and back-annotate d to the simulati on netli st. All timing parameters as sume worst-case operating c ondi­tions (supply voltage and junction temperature). Values apply to all Virtex devices unless otherwise noted.
IOB Input Switching Characteristics
Input delays associated with the pad are specified for LVTTL levels. For other standards, adjust the delays with
the values shown in "IOB Input Switching Characteristics
Standard Adjustments" on page 6.
Symbol Description Device
Speed Grade
Units
-4
Min Max
Propagation Delays
T
IOPI
Pad to I output, no delay All - 1.0 ns
T
IOPID
Pad to I output, with delay XQV100 - 1.9 ns
XQV300 - 1.9 ns XQV600 - 2.3 ns
XQV1000 - 2.7 ns
T
IOPLI
Pad to output IQ via transparent latch, no delay
All - 2.0 ns
T
IOPLID
Pad to output IQ via transparent latch, with delay
XQV100 - 4.8 ns XQV300 - 5.1 ns XQV600 - 5.5 ns
XQV1000 - 5.9 ns
Sequential Delays
T
IOCKIQ
Clock CLK to output IQ All - 0.8 ns
Setup and Hold Times with Respect to Clock CLK Setup Time / Hold Time
T
IOPICK
/ T
IOICKP
Pad, no delay All 2.0 / 0 - ns
T
IOPICKD
/ T
IOICKPD
Pad, with delay All 5.0 / 0 - ns
T
IOICECK
/ T
IOCKICE
ICE input All 1.0 / 0 - ns
T
IOSRCKI
/ T
IOCKISR
SR input (IFF, synchronous) All 1.3 / 0 - ns
Set/Reset Delays
T
IOSRIQ
SR input to IQ (asynchronous) All - 1.8 ns
T
GSRQ
GSR to output IQ All - 12.5 ns
Notes:
1. A Zero “0” Hold Time lis ting i ndica tes no hold time or a ne gative hold time. Negative values can not be guaranteed “best-case”, but if a “0” is listed, there is no positive hold time.
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IOB Input Switching Characteristics Standard Adjustments
Symbol Description Standard
Speed Grade
Units-4
Data Input Delay Adjustments
T
ILVTTL
Standard-specific data input delay adjustments LVTTL 0.0 ns
T
ILVCMOS2
LVCMOS2 –0.05 ns
T
IPCI33_3
PCI, 33 MHz, 3.3V –0.14 ns
T
IPCI33_5
PCI, 33 MHz, 5.0V 0.33 ns
T
IGTL
GTL 0.26 ns
T
IGTLP
GTL+ 0.14 ns
T
IHSTL
HSTL 0.04 ns
T
ISSTL2
SSTL2 –0.10 ns
T
ISSTL3
SSTL3 –0.06 ns
T
ICTT
CTT 0.02 ns
T
IAGP
AGP –0.08 ns
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Preliminary Product Specification
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IOB Output Switching Characteristics
Output delays terminatin g at a pad are s pec ifi ed for LVTTL wi th 12 mA dr ive and fast slew rate. For other standards, adjust the delays with the values shown in "IOB Output Switching Characteristics Standard Adjustments" on page 8.
Symbol Description
Speed Grade
Units
-4
Min Max
Propagation Delays
T
IOOP
O input to pad - 3.5 ns
T
IOOLP
O input to pad via transparent latch - 4.0 ns
3-State Delays
T
IOTHZ
T input to pad high-impedance
(1)
-2.4ns
T
IOTON
T input to valid data on pad - 3.7 ns
T
IOTLPHZ
T input to pad high-impedance via transparent latch
(1)
-3.0ns
T
IOTLPON
T input to valid data on pad via transparent latch - 4.2 ns
T
GTS
GTS to pad high-impedance
(1)
-6.3ns
Sequential Delays
T
IOCKP
Clock CLK to pad - 3.5 ns
T
IOCKHZ
Clock CLK to pad high-impedance (synchronous)
(1)
-2.9ns
T
IOCKON
Clock CLK to valid data on pad (synchronous) - 4.1 ns
Setup and Hold Times before/after Clock CLK Setup Time / Hold Time
(2)
T
IOOCK/TIOCKO
O input 1.3 / 0 - ns
T
IOOCECK/TIOCKOCE
OCE input 1.0 / 0 - ns
T
IOSRCKO/TIOCKOSR
SR input (OFF) 1.4 / 0 - ns
T
IOTCK/TIOCKT
3-state setup times, T input 0.9 / 0 - ns
T
IOTCECK/TIOCKTCE
3-state setup times, TCE input 1.1 / 0 - ns
T
IOSRCKT/TIOCKTSR
3-state setup times, SR input (TFF) 1.3 / 0 - ns
Set/Reset Delays
T
IOSRP
SR input to pad (asynchronous) 4.6 - ns
T
IOSRHZ
SR input to pad high-impedance (asynchronous)
(1)
3.9 - ns
T
IOSRON
SR input to valid data on pad (asynchronous) 5.1 - ns
Notes:
1. High-impedance turn-off delays should not be adjusted.
2. A Zero “0” Hold Time listing ind ic ate s no hold time or a negative hold time. Ne gat ive values can not be guarantee d “best-case, but if a “0” is listed, there is no positive hold time.
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DS002 (v1.5) December 5, 2001
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Preliminary Product Specification
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IOB Output Switching Characteristics Standard Adjustments
Output delays terminatin g at a pad are s pec ifi ed for LVTTL wi th 12 mA dr ive and fast slew rate. For other standards, adjust the delays by the values shown.
Symbol Description Standard
Speed Grade
Units-4
Output Delay Adjustments
T
OLVTTL_S2
Standard-specific adjustments for output delays terminating at pads (based on standard capacitive load, C
sl
)
LVTTL, slow 2 mA 17.0 ns
T
OLVTTL_S4
4 mA 8.6 ns
T
OLVTTL_S6
6 mA 5.6 ns
T
OLVTTL_S8
8 mA 3.5 ns
T
OLVT TL_S12
12 mA 2.2 ns
T
OLVT TL_S16
16 mA 2.0 ns
T
OLVT TL_S24
24 mA 1.6 ns
T
OLVTTL_F2
LVTTL, fast 2 mA 15.1 ns
T
OLVTTL_F4
4 mA 6.1 ns
T
OLVTTL_F6
6 mA 3.6 ns
T
OLVTTL_F8
8 mA 1.2 ns
T
OLVTTL_F12
12 mA 0.0 ns
T
OLVTTL_F16
16 mA –0.05 ns
T
OLVTTL_F24
24 mA –0.23 ns
T
OLVCMOS2
LVCMOS2 0.12 ns
T
OPCI33_3
PCI, 33 MHz, 3.3V 2.7 ns
T
OPCI33_5
PCI, 33 MHz, 5.0V 3.3 ns
T
OGTL
GTL 0.6 ns
T
OGTLP
GTL+ 1.0 ns
T
OHSTL_I
HSTL I –0.5 ns
T
OHSTL_III
HSTL III –1.0 ns
T
OHSTL_IV
HSTL IV –1.1 ns
T
OSSTL2_I
SSTL2 I –0.5 ns
T
OSSTL2_II
SSTL2 II –1.0 ns
T
OSSTL3_I
SSTL3 I –0.5 ns
T
OSSTL3_II
SSTL3 II –1.1 ns
T
OCTT
CTT –0.6 ns
T
OAGP
AGP –1.0 ns
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Preliminary Product Specification
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Calculation of T
ioop
as a Function of Capacitance
The values for T
ioop
were based on the stan dar d c apa ci tive
load (Csl) for each I/O standard as listed in Table 2. For other capacitive loads, use the formulas below to calcu-
late the corresponding T
ioop
:
T
ioop
= T
ioopl
+ T
opadjust + (Cload
- Csl) * fl
Where:
T
opadjust
is reported above in the Output Delay
Adjustment section. C
load
is the capacitive load for the design.
Clock Distribution Guidelines and Switching Characte ris ti cs
Table 2:
Constants for Use in Calculation of T
op
Standard C
sl
(pF) fl (ns/pF)
LVTTL slow slew rate
2 mA drive 35 0.41 4 mA drive 35 0.20 6 mA drive 35 0.100 8 mA drive 35 0.086 12 mA drive 35 0.058 16 mA drive 35 0.050 24 mA drive 35 0.048
LVTTL fast slew rate
2 mA drive 35 0.41 4 mA drive 35 0.20 6 mA drive 35 0.13 8 mA drive 35 0.079 12 mA drive 35 0.044 16 mA drive 35 0.043 24 mA drive 35 0.033
LVCMOS2 35 0.041 PCI 33 MHz 5V 50 0.050 PCI 33 MHZ 3.3V 10 0.050 GTL 0 0.014 GTL+ 0 0.017 HSTL Class I 20 0.022 HSTL Class III 20 0.016 HSTL Class IV 20 0.014 SSTL2 Class I 30 0.028 SSTL2 Class II 30 0.016 SSTL3 Class 1 30 0.029 SSTL3 Class II 30 0.016 CTT 20 0.035 AGP 10 0.037
Table 2:
Constants for Use in Calculation of T
op
Standard C
sl
(pF) fl (ns/pF)
Symbol Description Device
Speed Grade
Units
-4
Min Max
Global Clock Skew
T
GSKEWIOB
Global clock skew between IOB flip-flops XQV100 - 0.15 ns
XQV300 - 0.18 ns XQV600 - 0.17 ns
XQV1000 - 0.25 ns
T
GPIO
Global clock PAD to output All - 0.9 ns
T
GIO
Global clock buffer I input to O output All - 0.9 ns
Notes:
1. These clock-distribution delays are provided for guidance only. They reflect the delays encountered in a typical design under worst-case conditions. Precise values for a particular design are provided by the timing analyzer.
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CLB Switching Characteristics
Delays originating at F/G inputs vary sli ghtly acco rding t o the inp ut used. T he values listed be low are worst-cas e. Precise values are provided by the timing analyzer.
Symbol Description
Speed Grade
Units
-4
Min Max
Combinatorial Delays
T
ILO
4-input function: F/G inputs to X/Y outputs - 0.8 ns
T
IF5
5-input function: F/G inputs to F5 output - 0.9 ns
T
IF5X
5-input function: F/G inputs to X output - 1.0 ns
T
IF6Y
6-input function: F/G inputs to Y output via F6 MUX - 1.2 ns
T
F5INY
6-input function: F5IN input to Y output - 0.5 ns
T
IFNCTL
Incremental delay routing through transparent latch to XQ/YQ outputs - 0.8 ns
T
BYYB
BY input to YB output - 0.7 ns
Sequential Delays
T
CKO
FF clock CLK to XQ/YQ outputs - 1.4 ns
T
CKLO
Latch clock CLK to XQ/YQ outputs - 1.6 ns
Setup and Hold Times before/after Clock CLK Setup Time / Hold Time
T
ICK/TCKI
4-input function: F/G Inputs 1.5 / 0 - ns
T
IF5CK/TCKIF5
5-input function: F/G inputs 1.7 / 0 - ns
T
F5INCK/TCKF5IN
6-input function: F5IN input 1.2 / 0 - ns
T
IF6CK/TCKIF6
6-input function: F/G inputs via F6 MUX 1.9 / 0 - ns
T
DICK/TCKDI
BX/BY inputs 0.8 / 0 - ns
T
CECK/TCKCE
CE input 1.0 / 0 - ns
T
RCKTCKR
SR/BY inputs (synchronous) 0.9 / 0 - ns
Clock CLK
T
CH
Minimum pulse width, High 2.0 - ns
T
CL
Minimum pulse width, Low 2.0 - ns
Set/Reset
T
RPW
Minimum pulse width, SR/BY inputs 3.3 - ns
T
RQ
Delay from SR/BY inputs to XQ/YQ outputs (asynchronous) - 1.4 ns
T
IOGSRQ
Delay from GSR to XQ/YQ outputs - 12.5 ns
Notes:
1. A Zero “0” Hold Time listing indicates no hold time or a negative hold time. Negative values can not be guaranteed “best-case”, but if a “0” is listed, there is no positive hold time.
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