XEMOD XD010-42S Datasheet

SIRENZA RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE
PRODUCT DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE
CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING SIRENZA.

Sirenza QuikPAC Data www.sirenza.com Rev. 4 (10-01-02) Page 1 of 2
XD010-42S

XD010-42S

PRELIMINARY 10W, 869-894MHz
QuikPAC Module Data CDMA Driver Amplifier

General description:

The XD010-42S QuikPAC™ 10W power module is a 2-stage Class
A amplifier module for use in the driver stages of linear RF power
amplifiers for cellular base stations. The power transistors are
fabricated using Sirenza’s latest, high performance LDMOS process.
This unit operates from a single voltage and has internal
temperature compensation of the bias voltage to ensure stable
performance over the full temperature range.

Features:

Single Voltage Operation
High Gain
High Efficiency
Advanced, XeMOS II LDMOS FETS
Stable Performance
50 Ω RF impedance
QuikPAC System Compatible

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range

F

869 894 MHz

Supply (Drain) Voltage

VD

28 VDC

Input and Output Impedance

Ω

50 Ohms

Load Impedance for Stable Operation (All Phases) VSWR 10/1
Baseplate Temperature T

OP

-20 +90 ºC

Maximum Ratings

Parameter

Symbol Value Units

Supply (Drain) Voltage VDD 35 VDC
Input RF Power PIN +20 dBm
Load Impedance for continuous operation without damage VSWR 5/1
Base Plate Temperature: Operating with no RF present 90 ºC
Lead Temperature during reflow soldering +210 ºC
Storage Temperature T

STG

-40 to +100 ºC

Performance at 25ºC

Parameter Symbol Min Nom Max Units

Supply Voltage

V

D1,2

27.8 28.0 28.2 VDC

Power Output at 1 dB Compression (single tone)

P-1

7 8 W

Gain at 1W Output (CW)

G

30.0 32.0 34.0 dB

Gain Flatness over frequency at 1W Output (CW)

∆G

0.2 0.4 dB

Input Return Loss at 1W Output (CW) (50 Ω Ref)

iRL

14 20 dB

Quiescent Current (total)

IDQ

930 mA

Drain Efficiency at 8W CW output

ηD

22 25 %

Drain Efficiency at 1W CDMA output (Single Carrier IS-95B)

ηD

3.5 %

ACPR at 1W CDMA Power Output (Single Carrier IS-95B)

-51 dBc

ALT-1 PR at 1W CDMA Output (Single Carrier IS-95B)

-80 dBc

3rd order IMD at 8W PEP (two- tone; 1MHz ∆F)

-30 -28 dBc

3rd order IMD at 1W PEP (two- tone; 1MHz ∆F)

-50 -40 dBc

Electrical Delay

3.9 ns

Deviation from linear phase (peak to peak)

0.5 deg.

Sirenza QuikPAC Data www.sirenza.com Rev. 4 (10-01-02) Page 2 of 2
XD010-42S

Performance Over Temperature

Parameter Symbol Min Nom Max Units

Power Output at 1 dB Compression (single tone)

P-1

8 W

Gain at 1W Output (CW)

G

32.0 dB

Gain Flatness over frequency at 1W Output (CW)

∆G

0.2 0.4 dB

Input Return Loss at 1W Output (CW) (50 Ω Ref)

iRL

18.0 dB

Drain Efficiency at 8W CW Output

ηD

25 %

Drain Efficiency at 1W CDMA Output (Single Carrier IS-95B)

ηD

3.5 %

ACPR at 1W CDMA Output (Single Carrier IS-95B)

-49 dBc

Notes:

The "Preliminary" designation on this data sheet indicates this product has not yet entered production. The data supplied
here is derived from engineering development and pilot production testing and may change.

The internal generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature
range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be provided
with AGC external to the module

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.

The RF leads are internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to
protect against video transients that may damage the active devices.

Package

This model is available in the D4F (H12109) package style.
Please see the applicable outline drawing for detailed dimensions.

D4F