XEMOD QPP-307 Datasheet

XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE PRODUCT
DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE CHARACTERISTICS
SHOULD BE VERIFIED BY CONTACTING XEMOD.

Xemod QuikPAC Data www.xemod.com Rev. C (8-2-01) Page 1 of 1
QPP-307

QPP-307

Preliminary 60W; 2110-2170MHz
QuikPAC Module Data Class AB Power Stage

General description:

The QPP-307 QuikPAC™ RF power module is an impedance
matched Class AB amplifier stage designed for use in the driver or
output stage of linear RF power amplifiers for cellular base stations.
The power transistors are fabricated using Xemod’s advanced design
LDMOS process. The gate terminal is connected directly to the
control voltage pin, allowing direct control of the bias. The user must
supply the proper value of VGS to set the desired quiescent current.

Features:

Single Polarity Operation
Matched for 50 Ω RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
QuikClip or Flange Mounting

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range

F

2110 2170 MHz

Supply (Drain) Voltage

VD

26.0 28.0 32.0 VDC

Bias (Gate) Voltage

VG

3.0 3.5 5.0 VDC

Bias (Gate) Current, Average

IG

2.0 mA

RF Source & Load Impedance

Ω

50 Ohms

Load Impedance for Stable Operation (All Phases) VSWR 10:1
Operating Baseplate Temperature T

OP

-20 +90 ºC

Output Dev ice Thermal Resistance, Channel to Baseplate Θjc 1.1 ºC/W

Maximum Ratings

Parameter

Symbol Value Units
Supply (Drain) Voltage VD 35 VDC
Control (Gate) Voltage, VD = 0 VDC VG 15 VDC
Input RF Power PIN 5 W
Load Impedance for continuous operation without damage VSWR 3:1
Output Device Channel Temperature 200 ºC
Lead Soldering Temperature +190 ºC
Storage Temperature T

STG

-65 to +150 ºC

Performance at 28VDC & 25ºC

Parameter Symbol Min Nom Max Units

Supply (Drain) Voltage

VD1

27.8 28.0 28.2 VDC

Quiescent Current (total)

IDQ

540 600 660 mA

Power Output at 1 dB Compression (single tone)

P-1

60 W

Gain at 12W PEP (two tone)

G

11.0 12.0 dB

Gain Variation over frequency at 12W PEP (two tone)

∆G

0.25 0.4 dB

Input Return Loss (50 Ω Ref) at 12W PEP (two tone)

IRL

12.0 14.0 dB

Drain Efficiency at 60W PEP (two tone)

η

28 31 %

3rd Order IMD Product (2 tone at 60W PEP;1 MHz spacing)

-30 -28 dBc

Xemod QuikPAC Data www.xemod.com Rev. C (8-2-01) Page 2 of 2
QPP-307

Performance at 28VDC & 25ºC (continued)

Parameter Symbol Min Nom Max Units

IMD Variation – 100 kHz to 25 MHz tone spacing

1.0 2.0 dB

2nd Harmonic at 60W P

out

(single tone)

dBc

3rd Harmonic at 60W P

out

(single tone)

dBc

Group (Signal) Delay

τd

1.8 ns

Transmission Phase Flatness

0.6 1.0 degrees

Drain Efficiency at 12.5W W-CDMA Output

η

20 22 %

W-CDMA ACPR at 4.8W Pout (single channel) (1)

-46 dBc

W-CDMA ACPR at 7.6W Pout (single channel) (1)

-44 dBc

W-CDMA ACPR at 12.0W Pout (single channel) (1)

-39 dBc

W-CDMA A CPR at 2.4W Pout (2 channels at 10MHz) (1)

-45 dBc

W-CDMA ACPR at 3.8W Pout (2 channels at 10MHz) (1)

-44 dBc

W-CDMA ACPR at 6.0W Pout (2 channels at 10MHz) (1)

-42 dBc

W-CDMA Alt 1 at 2.4W Pout (2 channels at 10MHz) (1)

-43 dBc

W-CDMA Alt 1 at 3.8W Pout (2 channels at 10MHz) (1)

-39 dBc

W-CDMA Alt 1 at 6.0W Pout (2 channels at 10MHz) (1)

-37 dBc

Notes:

(1) W-CDMA test waveform used is 3GPP Test Model 1, 64DHCP, 10.5dB Peak to Average ratio.
This QuikPAC module requires an externally supplied gate voltage (VGS) on the gate leads (pins 1 and 5) to set the

operating point (quiescent current - IDQ) of the power transistors. VGS may be safely set to any voltage in the range listed in
the table. The data provided in the Performance section of this data sheet was obtained with IDQ set to a value within the
range shown (a nominal value ±10%). Since the operating characteristics of the module will vary as IDQ changes, the bias
to be used will depend on the application.

Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module without RF terminations on input and output.

The VGS corresponding to a specific IDQ will vary from module to module.. This is due to the normal die-to-die variation in
threshold voltage of LDMOS transistors.

Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a VGS supply
with thermal compensation if operation over a wide temperature range is required.

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time -varying waveforms.

The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.