XEMOD QPP-029 Datasheet

QPP-029

Preliminary 35W, 824-849MHz
QuikPAC Module Data Class AB Driver Stage

General description:

The QPP-029 QuikPAC™ RF power module is an impedance
matched Class AB amplifier stage designed for use cellular repeater
systems. The power transistor is fabricated using Xemod’s advanced
design LDMOS process. The gate terminal is connected directly to
the control voltage pin, allowing direct control of the bias. The user
must supply the proper value of VGS to set the desired quiescent
current.

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range
Supply (Drain) Voltage
Bias (Gate) Voltage
Bias (Gate) Current, Average
RF Source & Load Impedance
Load Impedance for Stable Operation (All Phases) VSWR 10:1
Operating Baseplate Temperature T
Output Device Thermal Resistance, Channel to Baseplate Θjc 1.9 ºC/W

F
VD
VG

IG

Ω

-20 +90 ºC

OP

Features:

Single Polarity Operation
Matched for 50 Ω RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
Flange Mounting

824 849 MHz

26.0 28.0 32.0 VDC

3.0 3.5 5.0 VDC

1.0 mA
50 Ohms

Maximum Ratings

Parameter

Supply (Drain) Voltage VD 35 VDC
Control (Gate) Voltage, VD = 0 VDC VG 15 VDC
Input RF Power PIN 2.5 W
Load Impedance for continuous operation without damage VSWR 3:1
Output Device Channel Temperature 200 ºC
Lead Temperature during reflow soldering +210 ºC
Storage Temperature T

Symbol Value Units

-40 to +100 ºC

STG

Performance at 28VDC & 25ºC

Parameter Symbol Min Nom Max Units

Supply (Drain) Voltage
Quiescent Current (total) (1)
Power Output at 1 dB Compression (single tone)
Gain at 7W PEP (two tone)
Gain Variation over frequency at 7W Output (two tone)
Input Return Loss (50 Ω Ref) at 7W PEP (two tone) IRL 12.0 18.0 dB
Drain Efficiency at 35W PEP (two tone)
3rd Order IMD Product (2 tone at 35W PEP;1 MHz spacing)

V

IDQ

P-1

G

∆G

η

D1,2

27.8 28.0 28.2 VDC
270 300 330 mA

35 40 W

15.0 16.0 dB

0.2 0.5 dB

32 35 %

-29 -27 dBc

XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE PRODUCT
DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE CHARACTERISTICS
SHOULD BE VERIFIED BY CONTACTING XEMOD.

Xemod QuikPAC Data www.xemod.com Rev. B (04-10-02) Page 1 of 3
QPP-029

Performance at 28VDC & 25ºC (continued)

Parameter Symbol Min Nom Max Units

IMD Variation – 100 kHz to 25 MHz tone spacing
2nd Harmonic at 35W P
3rd Harmonic at 35W P
Group (Signal) Delay
Transmission Phase Flat ness
CDMA ACPR at 7W Pavg
CDMA ACPR at 3.5W Pavg
Drain Efficiency at 7W CDMA
Drain Efficiency at 3.5W CDMA

(single tone)

out

(single tone)

out

τd

η
η

Notes:

This QuikPAC module requires an externally supplied gate voltage (VGS) on the gate lead (pin 3) to set the operating point
(quiescent current - IDQ) of the power transistor. VGS may be safely set to any voltage in the range listed in the table. This
permits a wide range of quiescent current to be used. Since the operating characteristics of the module will vary as IDQ
changes, the bias setting will depend on the application. The data provided in the Performance section of this data sheet
was obtained with IDQ set to a value within the range listed (a nominal value ±10%). This particular value was chosen to
optimize gain, IMD performance, and efficiency simultaneously.

Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.

1.0 2.0 dB

-40 dBc

-45 dBc

3.5 ns

0.5 degrees

-45 dB

-48 dB
20 23 %
12 14 %

The VGS corresponding to a specific IDQ will vary from module to module. This is due to the normal die-to-die variation in
threshold voltage of LDMOS transistors.

Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a VGS supply
with thermal compensation if operation over a wide temperature range is required.

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time -varying waveforms.

The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.

Xemod QuikPAC Data www.xemod.com Rev. B (04-10-02) Page 2 of 3
QPP-029