XEMOD QPP-023 Datasheet

QPP-023

200W, 869-894MHz
QuikPAC Module Data Class AB Power Stage

General description:

The QPP-023 QuikPAC™ RF power module is an impedance
matched Class AB amplifier stage designed for use in the output
stage of linear RF power amplifiers for cellular base stations. The
power transistors are fabricated using Xemod’s advanced design
LDMOS process. The gate terminal is connected directly to the
control voltage pin, allowing direct control of the bias. The user must
supply the proper value of V

to set the desired quiescent current.

GS

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range

Supply (Drain) Voltage

Bias (Gate) Voltage

Bias (Gate) Current, Average

RF Source & Load Impedance

Load Impedance for Stable Operation (All Phases) VSWR 10:1
Operating Baseplate Temperature T
Output Device Thermal Resistance, Channel to Baseplate

F
VD
VG

IG

W

-20 +90 ºC

OP

Qjc

Features:

Single Polarity Operation
Matched for 50 W RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
QuikClip or Flange Mounting

869 894 MHz

26.0 28.0 32.0 VDC

3.0 3.5 5.0 VDC

2.0 mA

50 Ohms

0.4 ºC/W

Maximum Ratings

Parameter

Supply (Drain) Voltage VD 35 VDC
Control (Gate) Voltage, VD = 0 VDC VG 15 VDC
Input RF Power PIN 20 W
Load Impedance for continuous operation without damage VSWR 3:1
Output Device Channel Temperature 200 ºC
Lead Soldering Temperature +190 ºC
Storage Temperature T

Symbol Value Units

-65 to +150 ºC

STG

Performance at 28VDC & 25ºC

Parameter Symbol Min Nom Max Units

Supply (Drain) Voltage

Quiescent Current (total)

Peak Envelope Power at 1 dB Compression (two tone)

Gain at 40W PEP (two tone)

Gain Variation over frequency at 40W Output (two tone)

Input Return Loss (50 W Ref) at 40W PEP (two tone)

Drain Efficiency at 200W PEP (two tone)

3rd Order IMD Product (2 tone at 200W PEP;1 MHz spacing)

IMD Variation – 100 kHz to 25 MHz tone spacing

2nd Harmonic at 200W P

3rd Harmonic at 200W P

(single tone)

out

(single tone)

out

V

D1,2

IDQ
P-1

G

DG

IRL

h

27.8 28.0 28.2 VDC

1,800 2,000 2,200 mA

200 220 W

13.0 13.5 dB

0.2 0.5 dB

12.0 15.0 dB

32 36 %

-30 -28 dBc

1.0 2.0 dB

dBc

dBc

XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE
PRODUCT DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE
CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING XEMOD.

Xemod QuikPAC Data www.xemod.com Rev. B (07-26-01) Page 1 of 2
QPP-023

Performance at 28VDC & 25ºC (continued)

Parameter Symbol Min Nom Max Units

Group (Signal) Delay

Transmission Phase Flatness

CDMA ACPR at 40W Pout AVG

CDMA ACPR at 20W Pout AVG

CDMA Drain Efficiency at 40W Pout AVG

CDMA Drain Efficiency at 20W Pout AVG

td

h

h

Notes:

This QuikPAC module requires an externally supplied gate voltage (VGS) on each gate lead (pins 1 and 5) to set the
operating point (quiescent current- I
the table. This permits a wide range of quiescent current to be used. Since the operating characteristics of the module will
vary as I
data sheet was obtained with I
chosen to optimize gain, IMD performance, and efficiency simultaneously.

Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.

The V
module by as much as ±0.10 volts. This is due to the normal die-to-die variation in threshold voltage of LDMOS transistors.

Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a V
thermal compensation if operation over a wide temperature range is required.

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.

The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.

changes, the bias setting will depend on the application. The data provided in the Performance section of this

DQ

DQ

corresponding to a specific IDQ will vary from module to module and may vary between the two sides of a dual RF

GS

) of the power transistors. VGS may be safely set to any voltage in the range listed in

DQ

set to a value within the range listed (a nominal value ±10%). This particular value was

Package Styles

This model is available in both C (H10549) and CF (H10895) package styles. Style CF is shown for reference. Please see
the applicable outline drawing for specific dimensions.

4.7 4.9 ns

0.5 1.0 degrees

46 47 dB

52 53 dB

20 21 %

13 15 %

supply with

GS

Xemod QuikPAC Data www.xemod.com Rev. B (07-26-01) Page 2 of 2
QPP-023