XEMOD QPP-012 Datasheet

XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE PRODUCT
DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE CHARACTERISTICS
SHOULD BE VERIFIED BY CONTACTING XEMOD.

Xemod QuikPAC Data www.xemod.com Rev. B (6-5-02) Page 1 of 3
QPP-012

QPP-012

120W, 925-960MHz
QuikPAC Module Data Class AB Power Stage

General description:

The QPP-012 QuikPAC™ RF power module is a Class AB amplifier
stage designed for use in the output stage of linear RF power
amplifiers for cellular base stations. The power transistors are
fabricated using Xemod’s advanced design LDMOS process. This unit
has a factory set, regulated and temperature compensated gate bias,
eliminating the need for the user to provide adjustable gate bias
voltage circuits and make individual bias adjustments during stage
alignment.

Features:

Single Polarity Operation
Matched for 50 Ω RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
QuikClip or Flange Mounting

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range

F

925 960 MHz

Supply (Drain) Voltage

VD

26.0 28.0 32.0 VDC

Bias (Gate) Voltage

VG

11.0 12.0 13.0 VDC

Bias (Gate) Current, Average

IG

40 mA

RF Source & Load Impedance

Ω

50 Ohms
Load Impedance for Stable Operation (All Phases) VSWR 10:1
Operating Baseplate Temperature T

OP

-20 +90 ºC

Output Dev ice Thermal Resistance, Channel to Baseplate Θjc 0.8 ºC/W

Maximum Ratings

Parameter

Symbol Value Units
Supply (Drain) Voltage VDD 35 VDC
Control (Gate) Voltage, VDD = 0 VDC VG 15 VDC
Input RF Power PIN 60 W
Load Impedance for continuous operation without damage VSWR 3:1
Output Device Channel Temperature 200 ºC
Lead Temperature During Reflow Soldering +210 ºC
Storage Temperature T

STG

-40 to +100 ºC

Performance at 28VDC & 25ºC

Parameter Symbol Min Nom Max Units

Supply (Drain) Voltage

V

D1,2

27.5 28.0 28.5 VDC

Quiescent Current (total) (1)

IDQ

900 1,000 1,100 mA

Power Output at 1 dB Compression (single tone)

P-1

120 130 W

Gain at 120W PEP (two tone)

G

12.0 13.0 dB

Gain Variation over frequency at 120W Output (two tone)

∆G

0.3 0.5 dB

Input Return Loss (50 Ω Ref) at 120W PEP (two tone)

IRL

12.0 14.0 dB

Drain Efficiency at 120W P

out

(single tone)

η

40 45 %

Drain Efficiency at 120W PEP (two tone)

η

32 33 %

3rd Order IMD Product (2 tone at 120W PEP;1 MHz spacing)

-28 -26 dBc

Xemod QuikPAC Data www.xemod.com Rev. B (6-5-02) Page 2 of 3
QPP-012

Performance at 28VDC & 25ºC (continued)

Parameter Symbol Min Nom Max Units

IMD Variation – 100 kHz to 25 MHz tone spacing

1.0 2.0 dB

2nd Harmonic at 120W P

out

(single tone)

dBc

3rd Harmonic at 120W P

out

(single tone)

dBc

Group (Signal) Delay

τd

4.0 ns

Transmission Phase Flatness

0.5 degrees

Performance at 28VDC Over Temperature

Parameter Symbol Min Nom Max Units

Power Output at 1 dB Compression (single tone)

P-1

W

Gain Variation over frequency at 24W Output (single tone)

∆G

dB

Input Return Loss (50 Ω Ref) at 24W PEP (two tone)

IRL

dB

Drain Efficiency at 120W PEP (two tone)

η

%

3rd Order IMD Product (2 tone at 120W PEP;1 MHz spacing)

4.0 dBc

Group (Signal) Delay

τd

0.5 ns

Notes:

This GR-version QuikPAC module has an internally regulated gate voltage that is preset at the factory. A voltage of
+12VDC (±1V) should be applied to each gate lead (pins 1 and 5). No further adjustment is required. The gate voltage is
thermally compensated for operation over the temperature range listed in the data sheet. Although the module will
operate with lower voltages applied, the internal regulator is not functioning and the specified performance may not be
achieved.

Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.

The quiescent current set during manufacture will be within the range specified in the Performance section (nominal
±10%) and is selected to balance IMD, input return loss, and efficiency. This setting is suitable for most applications.
Modules with different optimization profiles are available by special order.

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time -varying waveforms.

The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.