XEMOD QPP-011 Datasheet

XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE
PRODUCT DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE
CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING XEMOD.

Xemod QuikPAC Data www.xemod.com Rev. A (11-21-00) Page 1 of 3
QPP-011

QPP-011

120W, 869-894MHz
QuikPAC Module Data Class AB Power Stage

General description:

The QPP-011 QuikPAC™ RF power module is a Class AB
amplifier stage designed for use in the output stage of linear RF
power amplifiers for cellular base stations. The power transistors are
fabricated using Xemod’s advanced design LDMOS process. This
unit has a factory set, regulated and temperature compensated gate
bias, eliminating the need for the user to provide adjustable gate
bias voltage circuits and make individual bias adjustments during
stage alignment.

Features:

Single Polarity Operation
Matched for 50 Ω RF interfaces
XeMOS FET Technology
Stable Performance
QuikPAC System Compatible
QuikClip or Flange Mounting

Standard Operating Conditions

Parameter Symbol Min Nom Max Units

Frequency Range

F

869 894 MHz

Supply (Drain) Voltage

VD

26.0 28.0 32.0 VDC

Bias (Gate) Voltage

VG

11.0 12.0 13.0 VDC

Bias (Gate) Current, Average

IG

40 mA

RF Source & Load Impedance

Ω

50 Ohms

Load Impedance for Stable Operation (All Phases) VSWR 10:1
Operating Baseplate Temperature T

OP

-20 +90 ºC

Output Device Thermal Resistance, Channel to Baseplate

Θjc

0.8 ºC/W

Maximum Ratings

Parameter

Symbol Value Units

Supply (Drain) Voltage VDD 35 VDC
Control (Gate) Voltage, VDD = 0 VDC VG 15 VDC
Input RF Power PIN 10 W
Load Impedance for continuous operation without damage VSWR 3:1
Output Device Channel Temperature 200 ºC
Lead Soldering Temperature +190 ºC
Storage Temperature T

STG

-65 to +150 ºC

Performance at 28VDC & 25ºC

Parameter Symbol Min Nom Max Units

Supply (Drain) Voltage

V

D1,2

27.5 28.0 28.5 VDC

Quiescent Current (total) (1)

IDQ

900 1,000 1,100 mA

Power Output at 1 dB Compression (single tone)

P-1

120 130 W

Gain at 24W PEP (two tone)

G

11.5 12.5 dB

Gain Variation over frequency at 24W Output (two tone)

∆G

0.3 0.5 dB

Input Return Loss (50 Ω Ref) at 24W PEP (two tone)

IRL

11.0 12.5 dB

Drain Efficiency at 120W P

out

(single tone)

η

35 40 %

Drain Efficiency at 120W PEP (two tone)

η

28 32 %

3rd Order IMD Product (2 tone at 120W PEP;1 MHz spacing)

-28 -26 dBc

Xemod QuikPAC Data www.xemod.com Rev. A (11-21-00) Page 2 of 3
QPP-011

Performance at 28VDC & 25ºC (continued)

Parameter Symbol Min Nom Max Units

IMD Variation – 100 kHz to 25 MHz tone spacing

1.0 2.0 dB

2nd Harmonic at 120W P

out

(single tone)

dBc

3rd Harmonic at 120W P

out

(single tone)

dBc

Group (Signal) Delay

τd

4.0 ns

Transmission Phase Flatness

0.5 degrees

Performance at 28VDC Over Temperature

Parameter Symbol Min Nom Max Units

Power Output at 1 dB Compression (single tone)

P-1

W

Gain Variation over frequency at 24W Output (single tone)

∆G

dB

Input Return Loss (50 Ω Ref) at 24W PEP (two tone)

IRL

dB

Drain Efficiency at 120W PEP (two tone)

η

%

3rd Order IMD Product (2 tone at 120W PEP;1 MHz spacing)

dBc

Group (Signal) Delay

τd

ns

Notes:

This GR-version QuikPAC module has an internally regulated gate voltage that is preset at the factory. A voltage of +12VDC
(±1V) should be applied to each gate lead (pins 1 and 5). No further adjustment is required. The gate voltage is thermally
compensated for operation over the temperature range listed in the data sheet. Although the module will operate with lower
voltages applied, the internal regulator is not functioning and the specified performance may not be achieved.

Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive
oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output.

The quiescent current set during manufacture will be within the range specified in the Performance section (nominal ±10%)
and is selected to balance IMD, input return loss, and efficiency. This setting is suitable for most applications. Modules with
different optimization profiles are available by special order.

Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some
applications may require energy storage on the drain leads to accommodate time-varying waveforms.

The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that
may damage the active devices.