WTE SB2050PT, SB2060PT, SB2040PT, SB2045PT, SB2030PT Datasheet

WTE

POWER SEM ICOND UCTOR S

SB2030PT – SB2060PT

20A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip H

!

Guard Ring for Transient Protection

!

High Current Capability, Low Forward

!

Low Reverse Leakage Current S

!

High Surge Current Capability J

!

Plastic Material has UL Flammability R K

Classification 94V-O

PIN1 2 3

L P

Mechanical Data N

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per M

MIL-STD-750, Method 2026 A

!

Polarity: As Marked on Body B

!

Weight: 5.6 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number C

Dim Min Max

A
B
C
D
E
G
H
J
K
L
M
N
P
R
S

TO-3P

3.20 3.50

4.59 5.16

20.80 21.30

19.70 20.20

2.10 2.40

0.51 0.76

15.90 16.40

1.70 2.70

3.10 Ø 3.30 Ø

3.50 4.51

5.20 5.70

1.12 1.22

2.90 3.30

11.70 12.80

4.30 Typical

All Dimensions in mm

G

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current @TC = 100°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage @IF = 10A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 1) C

= 100°C

A

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

RM

I

j

@TA=25°C unless otherwise specified

SB

2030PTSB2035PTSB2040PTSB2045PTSB2050PTSB2060PT

30 35 40 45 50 60 V

21 24.5 28 31.5 35 42 V

D

E

20 A

250 A

0.55 0.75 V

1.0
50

1100 pF

PIN 1 - +
PIN 3 - Case PIN 2

Unit

mA

Typical Thermal Resistance Junction to Case (Note 2) R
Operating and Storage Temperature Range Tj, T

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB2030PT – SB2060PT 1 of 3 © 2002 Won-Top Electronics

JC



STG

2.5 K/W

-65 to +150 °C

g

20

100

(AV)

I , AVERAGE FORWARD CURRENT (A)

300

16

12

8

4

0

0 50 100 150

T , CASE TEMPERATURE(°C)

C

Fig. 1 Forward Current Derating Curve

8.3 ms single half-sine-wave
JEDEC method

250

200

SB2030PT -SB2045PT

10

SB2050PT -SB2060PT

1.0

F

I , INSTANTANEOUSFORWARD CURRENT (A)

0.1

0.1 0.3 0.5 0.7 0.9
V , INSTANTANEOUSFORWARD VOLTAGE(V)

F

Fig. 2 Typical Forward Characteristics per Element

4000

1000

T = 25°C

j

Pulsewidth = 300µs

2% duty cycle

T = 25°C

j

f = 1MHz

I , PEAK FORWARD CURRENT (A)

FSM

150

100

50

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Maximum Non-Repetitive Surge Current

100

10

1.0

0.1

T = 100°C

j

T = 75°C

j

T = 25°C

j

j

C, CAPACITANCE (pF)

100

0.1 1.0 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 4 TypicalJunction Capacitance per Element

R

I , INSTANTANEOUS REVERSE CURRENT (mA)

0.01
0

40

80

120

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

. 5 Typical Reverse Characteristics per Element

Fi

SB2030PT – SB2060PT 2 of 3 © 2002 Won-Top Electronics