WTE SB1645, SB1630, SB1640, SB1635, SB1660 Datasheet

WTE

POWER SEM ICOND UCTOR S

SB1630 – SB1660

16A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip B

!

Guard Ring for Transient Protection

!

High Current Capability, Low Forward C

!

Low Reverse Leakage Current

!

High Surge Current Capability G A

!

Plastic Material has UL Flammability

Classification 94V-O

Mechanical Data F

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per P

MIL-STD-202, Method 208

!

Polarity: See Diagram I

!

Weight: 2.24 grams (approx.) L

!

Mounting Position: Any H

!

Marking: Type Number

PIN1 2

D

TO-220A

Dim Min Max

A
B
C
D
E
F

E

G
H

I
J
K
L
P

14.9 15.1
— 10.5

2.62 2.87

3.56 4.06

13.46 14.22

0.68 0.94

3.74 Ø 3.91 Ø

5.84 6.86

4.44 4.70

2.54 2.79

0.35 0.64

1.14 1.40

4.95 5.20

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol SB1630 SB1635 SB1640 SB1645 SB1650 SB1660 Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V

Average Rectified Output Current @TC = 95°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage @IF = 16A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 1) C

= 100°C

A

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

RM

I

j

K

@TA=25°C unless otherwise specified

30 35 40 45 50 60 V

21 24.5 28 31.5 35 42 V

J

16 A

275 A

0.57 0.75 V

1.0
50

700 pF

PIN 1 + +
PIN 2 - Case

mA

Typical Thermal Resistance Junction to Case (Note 2) R
Operating and Storage Temperature Range Tj, T

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB1630 – SB1660 1 of 3 © 2002 Won-Top Electronics

JC



STG

3.5 K/W

-65 to +150 °C

20

100

16

12

8

4

(AV)

I , AVERAGE FORWARD CURRENT (A)

0

0 50 100 150

T , CASE TEMPERATURE ( C)

C

Fig. 1 Forward Current Derating Curve

300

8.3 ms single half-sine-wave
JEDEC method

250

200

SB1630-SB1645

10

SB1650-SB1660

1.0

T = 25 C

°

j

Pulse width = 300 s

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1

0.1

°

V , INSTANTANEOUS FORWARD VOLTAGE (V)

0.3 0.5

F

2% duty cycle

0.7

µ

0.9

Fig. 2 Typical Forward Characteristics

4000

T = 25 Cj°

1000

FSM

I , PEAK FORWARD SURGE CURRENT (A)

150

100

50

0

1

10

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

100

10

1.0

0.1

100

j

C , CAPACITANCE (pF)

100

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 4 Typical Junction Capacitance

T = 100 C

°

j

T = 75 C

°

j

T = 25 C

°

j

R

I , INSTANTANEOUS REVERSE CURRENT (A)

0.01
0 40 80 120

PERCENT OF PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

SB1630 – SB1660 2 of 3 © 2002 Won-Top Electronics