WTE RS1A-T1, RS1A-T3, RS1B-T1, RS1B-T3, RS1D-T1 Datasheet
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WTE
POWER SEMICONDUCTORS
RS1A – RS1K
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
!
Glass Passivated Die Construction
!
Ideally Suited for Automatic Assembly B
!
Low Forward Voltage Drop, High Efficiency
!
Surge Overload Rating to 30A Peak D
!
Low Power Loss A
!
Fast Recovery Time F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
!
Case: Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics
Characteristic Symbol RS1A RS1B RS1D RS1G RS1J RS1K Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TL = 90°C I
RRM
V
RWM
V
R
V
R(RMS)
O
50 100 200 400 600 800 V
35 70 140 280 420 560 V
SMA/DO-214AC
Dim Min Max
A
B
C
D
E
F
G
H
All Dimensions in mm
@TA=25°C unless otherwise specified
2.50 2.90
4.00 4.60
1.40 1.60
0.152 0.305
4.80 5.28
2.00 2.44
0.051 0.203
0.76 1.52
1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 1) t
Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance (Note 3) R
Operating and Storage Temperature Range T
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
RS1A – RS1K 1 of 3 © 2002 Won-Top Electronics
= 125°C
A
2
land area.
FSM
I
FM
RM
I
rr
j
JL
j, TSTG
30 A
1.30 V
5.0
300
150 250 500 nS
10 pF
32 K/W
-50 to +150 °C
µA
1.2
1.0
10
O
I , AVERAGE RECTIFIED CURRENT (A)
0.8
0.6
0.4
0.2
0
255075100125150175
T,LEAD TEMPERATURE ( C)
L
Fig. 1 Forward Current Derating Curve
30
Single Half-Sine-Wave
(JEDEC Method)
T = 150°C
j
20
1.0
0.1
T = 25°C
j
F,
I INSTANTANEOUS FORWARD CURRENT (A)
0.01
I Pulse Width: 300 s
F
µ
0 0.4 0.8 1.2 1.6
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
1000
T = 125 C
°
j
100
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
50 NI (Non-inductive)Ω
Device
Under
1.0
Test
Ω
NI
(+)
50V DC
Approx
(-)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
10 NIΩ
Oscilloscope
(Note 1)
Generator
Ω
Ω
(-)
Pulse
(Note 2)
(+)
T = 25°C
j
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
1.0
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
t
+0.5A
0A
-0.25A
-1.0A
rr
Settimebasefor10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
RS1A – RS1K 2 of 3 © 2002 Won-Top Electronics
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