WTE KBU802G, KBU808G, KBU806G, KBU810G, KBU804G Datasheet

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WTE
POWER SEM ICOND UCTOR S
KBU800G – KBU810G
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A
!
Low Forward Voltage Drop B C
!
High Current Capability D
!
!
High Surge Current Capability K L
!
Ideal for Printed Circuit Boards -
J G
Mechanical Data
!
Case: Molded Plastic H
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 8.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
~ ~ +
N
E
KBU
Dim Min Max
A
22.70 23.70
B
3.80 4.10
C
4.20 4.70
D
1.70 2.20
E
10.30 11.30
G
4.50 6.80
H
4.60 5.60
J
25.40
K
L M N
P All Dimensions in mm
19.30
16.80 17.80
6.60 7.10
4.70 5.20
1.20 1.30
P
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage V Average Rectified Output Current @TA = 65°C I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage (per element) @IF = 4.0A V Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T Operating and Storage Temperature Range T
= 125°C
A
V
V
RRM
RWM
V
R(RMS)
FSM
I
I
j, TSTG
KBU
800G
R
O
FM
R
@TA=25°C unless otherwise specified
KBU
801G
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
KBU
802G
KBU
804G
-55 to +150 °C
KBU
806G
8.0 A
200 A
1.1 V
5.0 500
KBU
808G
KBU
810G
Unit
µA
KBU800G – KBU810G 1 of 3 © 2002 Won-Top Electronics
8
100
6
10
4
1.0
2
I , AVERAGE FORWARD CURRENT (A)
F
I , PEAK FWD SURGE CURRENT (A)
Mounted on4X4inch
(AV)
Copper PC Board
12.7 mm lead length
0
0 50 100 150
T,AMBIENT TEMPERATURE(°C)
A
Fig. 1 Forward Current Derating Curve
300
8.3 ms Single half-sine-wave
250
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Forward Surge Current
10
T = 125°C
j
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig.2TypicalForwardCharacteristics, per element
1000
100
J
C , CAPACITANCE (pF)
10
0.1
1
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typ Junction Capacitance per element
T = 25°C
j
Pulse width = 300 µs
T = 25°C
j
f=1MHz
10
100
T = 100°C
j
1.0
0.1
T = 25°C
j
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
0.01 0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
KBU800G – KBU810G 2 of 3 © 2002 Won-Top Electronics
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