WTE KBU806, KBU801, KBU810, KBU800, KBU804 Datasheet
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WTE
POWER SEMICONDUCTORS
KBU800 – KBU810
Features
!
Diffused Junction A
!
Low Forward Voltage Drop B C
!
High Current Capability D
!
High Reliability
!
High Surge Current Capability K L
!
Ideal for Printed Circuit Boards -
!
UL Recognized File # E157705
~ ~ +
E
J G
Mechanical Data
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Case: Molded Plastic H
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 8.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
N
8.0A BRIDGE RECTIFIER
KBU
Dim Min Max
A
22.70 23.70
B
3.80 4.10
C
4.20 4.70
D
M
N
All Dimensions in mm
E
G
H
J
K
L
P
1.70 2.20
10.30 11.30
4.50 6.80
4.60 5.60
25.40 —
— 19.30
16.80 17.80
6.60 7.10
4.70 5.20
1.20 1.30
P
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
FM
R
2
KBU
R
t
JC
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TC = 100°C I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element) @IF = 4.0A V
Peak Reverse Current @TC = 25°C
At Rated DC Blocking Voltage @T
Rating for Fusing (t < 8.3ms) (Note 1) I
Typical Thermal Resistance (Note 2) R
= 100°C
C
V
V
RRM
RWM
V
R(RMS)
FSM
I
I
@TA=25°C unless otherwise specified
KBU
800
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
801
KBU
802
KBU
KBU
804
8.0 A
300 A
1.0 V
10
1.0
373 A2s
7.5 K/W
806
KBU
808
KBU
810
Unit
µA
mA
Operating and Storage Tem perat ure Range T
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.
KBU800 – KBU810 1 of 3 © 2002 Won-Top Electronics
j, TSTG
-65 to +150 °C
8
Heat Sink
100
6
10
4
1.0
2
I , AVERAGE FORWARD CURRENT (A)
F
I , PEAK FWD SURGE CURRENT (A)
Mounted on4X4inch
(AV)
Copper PC Board
12.7 mm lead length
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fig. 1 Forward Current Derating Curve
300
8.3 ms Single half-sine-wave
250
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Forward Surge Current
10
T = 125°C
j
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig.2TypicalForwardCharacteristics, per element
1000
100
J
C , CAPACITANCE (pF)
10
0.1
1
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typ Junction Capacitance per element
T = 25°C
j
Pulse width = 300 µs
T = 25°C
j
f=1MHz
10
100
T = 100°C
j
1.0
0.1
T = 25°C
j
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
0.01
0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
KBU800 – KBU810 2 of 3 © 2002 Won-Top Electronics
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