WTE KBPC801G, KBPC810G, KBPC806G, KBPC808G, KBPC802G Datasheet
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WTE
POWER SEMICONDUCTORS
KBPC800G – KBPC810G
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
High Current Capability
!
High Case Dielectric Strength H
!
High Surge Current Capability J
!
Ideal for Printed Circuit Board Application G + ~
!
Plastic Material has Underwriters Laboratory
Flammability Classification 94V-O E A
~ -
E
Mechanical Data
!
Case: Molded Plastic D C
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Marked on Body B
!
Weight: 5.4 grams (approx.) A
!
Mounting Position: Through Hole for #6 Screw
!
Mounting T orque: 5.0 Inch-pounds Maximum
!
Marking: Type Number
KBPC-8
Dim Min Max
A
18.54 19.56
B
6.35 7.60
C
19.00 —
D
E
G
H
J
All Dimensions in mm
1.27 Ø Typical
5.33 7.37
Hole for #6 screw
3.60 4.00
12.20 13.20
2.38 x 45°C Typical
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RRM
RWM
R
V
O
FSM
FM
R
I
2
t
j
JC
STG
KBPC
800G
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TA = 50°C I
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element) @IF = 4.0A V
Peak Reverse Current @TC = 25°C
At Rated DC Blocking Voltage @T
I2t Rating for Fusing (t<8.3ms) (Note 2) I
Typical Junction Capacitance (Note 3) C
Typical Thermal Resistance (Note 4) R
Operating and Storage Temperature Range Tj, T
= 125°C
C
V
V
R(RMS)
I
@TA=25°C unless otherwise specified
KPBC
KBPC
KBPC
KBPC
801G
802G
804G
806G
8.0 A
160 A
1.1 V
5.0
500
160 A2s
200 pF
6.0 K/W
-55 to +150 °C
KBPC
808G
KBPC
810G
Unit
µA
Note: 1. Mounted on 8.6" sq. x 0.24" thick Al. plate.
2. Non-repetitive, for t > 1ms and < 8.3ms.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to case per element.
KBPC800G – KBPC810G 1 of 3 © 2002 Won-Top Electronics
8
6
4
2
0
AV
I , AVERAGE FORWARD OUTPUT CURRENT (A)
0 40 80 120 160
T,AMBIENT TEMPERATURE(°C)
A
Fig. 1ForwardCurrentDerating Curve
Resistive or
Inductive load
10
1.0
0.1
F
I , FORWARD CURRENT (A)
Pulse width = 300µs
0.01
0 0.4 0.8
V , INSTANTANEOUSFORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics, per element
T = 25°C
j
1.2
1.6
180
Single half sine-wave
150
JEDEC method
120
90
60
30
F
I , PEAK FORWARD SURGE CURRENT (A)
0
1.0 10 100
NUMBER OF CYCLES AT 60Hz
Fig.3Forward Surge Current
10
T = 100°C
j
1.0
0.1
T = 25°C
j
R
0.01
I ,INSTANTANEOUS REVERSE CURRENT (µA)
04080120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics, per element
KBPC800G – KBPC810G 2 of 3 © 2002 Won-Top Electronics
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