WTE GBU8J, GBU8G, GBU8D, GBU8K, GBU8B Datasheet
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WTE
POWER SEM ICONDUCTORS
GBU8A – GBU8K
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A
!
Low Forward Voltage Drop D
!
High Current Capability J
!
High Reliability C
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
+ ~ ~ -
E
G K
Mechanical Data H
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 4.0 grams (approx.) B
!
Mounting Position: Any
!
Marking: Type Number
N
P
L
GBU
Dim Min Max
A
21.80 22.30
B
18.30 18.80
C
7.40 7.90
D
3.50 4.10
E
1.52 2.03
G
2.16 2.54
H
4.83 5.33
J
1.65 2.16
K
1.65 2.03
L
0.76 1.02
M
N
All Dimensions in mm
P
3.30 3.56
17.50 18.00
0.46 0.56
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TC = 100°C
@T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I2t Rating for Fusing (t < 8.35ms) I2t 166 A2s
Forward Voltage (per element) @IF = 8.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Thermal Resistance (per leg) (Note 1) R
Typical Thermal Resistance (per leg) (Note 2) R
Operating and Storage Tem perature Range T
= 45°C
A
= 100°C
C
RRM
V
RWM
V
R
V
R(RMS)
O
I
FSM
I
FM
R
I
j, TSTG
JA
JC
@TA=25°C unless otherwise specified
50 100 200 400 600 800 V
35 70 140 280 420 560 V
8.0
6.0
200 A
1.0 V
5.0
500
18.0 K/W
3.0 K/W
-55 to +150 °C
A
µA
Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length with 12mm2 copper pads.
2. Thermal resistance junction to case, mounted on 7.5 x 7.5 x 0.3cm thick AL plate.
GBU8A – GBU8K 1 of 3 © 2002 Won-Top Electronics
10
Resistive or
Inductive Load
100
8
Heatsink
6
PC Board
4
2
(AV)
I , AVG FORWARD OUTPUT CURRENT (A)
0
0 50 100 150
T,TEMPERATURE(C)
°
Fig. 1 Forward Current Derating Curve
250
200
Single Half-Sine Wave
(JEDEC Method)
I , INSTANTANEOUS FORWARD CURRENT (A)
F
1000
T = 25 Cj°
10
1.0
Pulse width = 300 sµ
0.1
0.2
0.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6 1.0
Fig.2TypicalForwardCharacteristics, per element
100
1.4
T=25Cj°
f = 1.0MHz
1.8
100
T = 25 C
°
j
0
FSM
I , PEAK FORWARD SURGE CURRENT (A)
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
j
C , JUNCTION CAPACITANCE (pF)
10
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
GBU8A – GBU8K 2 of 3 © 2002 Won-Top Electronics
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