WTE FR801G, FR807G, FR806G, FR803G, FR802G Datasheet

WTE

POWER SEM ICOND UCTOR S

FR801G – FR807G

8.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER

Features

!

Glass Passivated Die Construction B

!

Fast Switching

!

High Current Capability C

!

Low Reverse Leakage Current

!

High Surge Current Capability G A

!

Plastic Material has UL Flammability

Classification 94V-O

Mechanical Data F

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per P

MIL-STD-202, Method 208

!

Polarity: See Diagram I

!

Weight: 2.24 grams (approx.) L

!

Mounting Position: Any H

!

Marking: Type Number

PIN1 2

D

TO-220A

Dim Min Max

A
B
C
D
E
F

E

G
H

I
J
K
L
P

14.9 15.1
— 10.5

2.62 2.87

3.56 4.06

13.46 14.22

0.68 0.94

3.74 Ø 3.91 Ø

5.84 6.86

4.44 4.70

2.54 2.79

0.35 0.64

1.14 1.40

4.95 5.20

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V

Average Rectified Output Current @TC = 100°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage @IF = 8.0A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 1) t

= 125°C

A

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

RM

I

rr

K

@TA=25°C unless otherwise specified

FR

801GFR802GFR803GFR804GFR805GFR806GFR807G

50 100 200 400 600 800 1000 V

35 70 140 280 420 560 700 V

J

8.0 A

150 A

1.3 V

5.0

100

150 250 500 nS

PIN 1 + +
PIN 2 - Case

Unit

µA

Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Case R
Operating and Storage Temperature Range Tj, T

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

FR801G – FR807G 1 of 3 © 2002 Won-Top Electronics

j

JC



STG

100 pF

3.0 K/W

-65 to +150 °C

8

300

8.3ms Single Half Sine-Wave
JEDEC Method

250

6

200

4

2

(AV)

I , AVERAGE FORWARD CURRENT

0

0 25 50 75 100 125 150 175

T,CASE TEMPERATURE ( C)

C

Fig.1,TypicalForwardCurrentDeratingCurve

1000

100

10

1

150

100

50

Fsm

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

°

NUMBER OF CYCLES AT 60Hz

Fig. 2 Max Non-Repetitive Peak Surge Current

1000

100

10

j

C , CAPACITANCE (pF)

T = 25 C

J

Pulse Width = 300 s

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1

1% Duty Cycle

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 3, Typical Instantaneous Forward Characteristics

50 NI (Non-inductive)Ω

Device

Under

1.0

Test

Ω

NI

(+)

50V DC
Approx

(-)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.

2.RiseTime=10nsmax.InputImpedance=50.

10 NIΩ

Oscilloscope

(Note 1)

°

Ω

µ

(-)

Pulse

Generator

(Note 2)

(+)

Ω

T = 25 C

j

1.0

f = 1.0MHz

1.0 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 4 Typical Junction Capacitance

t

rr

+0.5A

0A

-0.25A

-1.0A

Settimebasefor5/10ns/cm

°

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

FR801G – FR807G 2 of 3 © 2002 Won-Top Electronics