WTE BA159-T3, BA159, BA158-TB, BA159-TB, BA157-TB Datasheet
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WTE
POWER SEMICONDUCTORS
BA157 – BA159
1.0A FAST RECOVERY RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.34 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol BA157 BA158 BA159 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
RRM
V
RWM
V
R
V
R(RMS)
400 600 1000 V
280 420 700 V
Dim Min Max
A
B
C
D
All Dimensions in mm
@TA=25°C unless otherwise specified
DO-41
25.4 —
4.06 5.21
0.71 0.864
2.00 2.72
C
Average Rectified Output Current
(Note 1) @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 2) t
Typical Junction Capacitance (Note 3) C
Operating Temperature Range T
Storage Temperature Range T
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
BA157 – BA159 1 of 3 © 2002 Won-Top Electronics
= 55°C
A
= 100°C
A
I
I
FSM
RM
I
STG
O
FM
rr
1.0 A
30 A
1.2 V
5.0
100
150 250 500 nS
j
j
15 pF
-65 to +125 °C
-65 to +150 °C
µA
(AV)
I , AVERAGE FWD RECTIFIED CURRENT (A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Forward Derating Curve
30
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
10
1.0
0.1
F
I , INSTANTANEOUS FWD CURRENT (A)
T = 25°C
j
Pulse width = 300 µs
0.01
0.6 0.8 1.0 1.2 1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
100
T = 25°C
j
f = 1MHz
FSM
I , PEAK FORWARD SURGE CURRENT (A)
20
10
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
10 NIΩ
(+)
(-)
50 NI (Non-inductive)Ω
Device
Under
Test
50V DC
Approx
(-)
Pulse
Generator
(Note 2)
10
j
C , CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
0A
-0.25A
1.0
Ω
Oscilloscope
NI
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
(Note 1)
(+)
Ω
Ω
-1.0A
Settimebasefor5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
BA157 – BA159 2 of 3 © 2002 Won-Top Electronics
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