WTE B8S-T3, B4S-T3, B6S-T3, B2S-T3, B1S-T3 Datasheet

WTE

POWER SEM ICOND UCTOR S

B1S – B8S

0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Features

!

Glass Passivated Die Construction G

!

Low Forward Voltage Drop

!

High Current Capability

!

High Surge Current Capability

!

Designed for Surface Mount Application B

!

Plastic Material – UL Recognition Flammability

Classification 94V-O C

A L

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

J

MIL-STD-202, Method 208 K

!

Polarity: As Marked on Case

!

Weight: 0.22 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

- +

~ ~

M

H

D E

Dim Min Max

A
B
C
D
E
G
H
J
K
L

M

All Dimensions in mm

MB-S

4.50 4.90

3.80 4.20

0.006 0.35
—0.20
—7.0

0.70 1.10

1.30 1.70

2.30 2.70

2.30 2.70
—3.00

0.50 0.80

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol B1S B2S B4S B6S B8S Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current @TA = 40°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

I2t Rating for Fusing (t < 8.35ms) I2t10A
Forward Voltage per element @IF = 0.5A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Typical Junction Capacitance (per leg) (Note 1) C
Typical Thermal Resistance (per leg) (Note 2) R
Operating and Storage Temperature Range Tj, T

= 125°C

A

RRM

V

RWM

V

V

R(RMS)

O

FSM

I

FM

RM

I



@TA=25°C unless otherwise specified

R

j

JA

STG

100 200 400 600 800 V

70 140 280 420 560 V

0.5 A

30 A

1.0 V

5.0

500

25 pF
85 K/W

-55 to +150 °C

µA

2

s

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to ambient mounted on PC board with 13mm

B1S – B8S 1 of 3 © 2002 Won-Top Electronics

2

copper pads.

g

(AV)

I , AVERAGE FORWARD CURRENT (A)

0.50

0.25

0

40

60

100 120 140

80

60 Hz Resistive or

Inductive load

I , INSTANTANEOUS FORWARD CURRENT (A)

10

T = 25°C

j

Pulse Width = 300µs

2% duty cycle

1.0

0.1

F

0.01

0.4

0.6

0.8

1.0

1.2

1.4

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Output Current Derating Curve

60

Single half-sine-Wave

(JEDECM ethod)

50

40

30

20

10

FSM

I , PEAK FORWARD SURGECURRENT (A)

0

110100

NUMBEROF CYCLESAT 60 Hz

Fi

. 3 Max Non-Repetitive PeakForward Surge Current

100

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typ Forward Characteristics (per element)

100

V = 50 mV p-p

10

J

C , CAPACITANCE (pF)

1

1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 4 Typ Junction Capacitance (per element)

T = 25°c

j

f = 1.0 Mhz

sig

T = 125°C

j

10

1.0

T = 25°C

j

R

I , INSTANTANEOUS REVERSE CURRENT (µA)

0.1

0.01
200406080100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typ Reverse Characteristics (per element)

B1S – B8S 2 of 3 © 2002 Won-Top Electronics