WJ Company FHF1 Datasheet
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX:408-577-6620 • e-mail:sales@wj.com • Web site: www.wj.com
February 2002
FHF1
Product Description
The FHF1 is a high dynamic range FET packaged in a low cost surface mount package. The
combination of low noise figure and high output IP3 at the same bias point makes it ideal for
receiver and transmitter applications. The
FHF1 achieves +39 dBm OIP3 at a mounting
temperature of 85˚C with an associated MTBF
of >100 years
6
. The package is a SOT-89. All
devices are 100% RF and DC tested.
The product is targeted for applications where
high linearity is required.
Product Features
•
3000-6000 MHz Bandwidth
•
+
39 dBm Output IP3
•
2.4 dB Noise Figure
•
+
21 dBm P1dB
•
Single or Dual Supply Operation
•
MTBF >100 Years
•
SOT-89 SMT Package
Functional Diagram
High Dynamic Range FET
Specifications
DC Electrical Parameter Units Minimum Typical Maximum Condition
Saturated Drain Current, Idss mA 100 140 170 Vgs = 0 V
Transconductance, Gm mS 120
Pinch Off Voltage, Vp V -3.0 -1.5 Ids = 0.6 mA
RF Parameter Units Minimum Typical Maximum Condition
Small Signal Gain, Gss dB 10 12
Maximum Stable Gain, Gmsg dB 17
Third Order Output Intercept, OIP3 dBm +37 +39
1 dB Compression Point, P1dB dBm +21
Noise Figure, NF dB 2.4
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 3000 MHz, 50 Ω system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz.The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
4. Idss is measured with Vgs = 0 V.
5. Pinch off voltage is measured when Ids = 0.6 mA.
6. MTBF calculated with channel temperature at 155˚C.
Absolute Maximum Ratings
Parameter Rating
Drain to Source Voltage 8.0 V
Gate to Source Voltage -6.0 V
Gate Current 4.5 mA
Storage Temperature -55 to +125°C
RF Input Power (continuous) +10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No. Descr iption
FHF1 High Dynamic Range FET
(Available in tape and reel)
The Communications Edge
™
Advanced Product Information
Actual Size
4
123
Function Pin No.
Gate 1
Source 2
Drain 3
Source 4
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX:408-577-6620 • e-mail:sales@wj.com • Web site: www.wj.com
February 2002
FHF1
Performance Charts
(Vds = 5.0 V, Ids = 150 mA,T = 22°C, 50 ohm system)
Advanced Product Information
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85°C
Thermal Resistance (Maximum) 59°C/W
Junction Temperature +155°C
(Recommended Maximum)
Notes:
1.Thermal Resistance deter mined at Maximum Tab Temperature and Maximum Power Dissipation.
2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours.
OIP3 vs. Frequency
50
40
30
20
OIP3 (dBm)
10
0
3 3.5 4 4.5 5 65.5
45
40
35
OIP3 (dBm)
30
3.0 GHz, 5V, 100%Idss
25
-40 -20 0 20 40 60 80
5V 100% Idss
3.3V 50% Idss
Frequency (GHz)
OIP3 vs. Temperature
Temperature (°C)
Gain vs. Temperature
16
12
8
Gain (dB)
4
0
3 3.5 4 4.5 5 5.5 6
Gain at -40°C
Gain at +22°C
Gain at +85°C
Frequency (GHz)
OIP3 vs. Power Out
45
40
35
30
IP3 (dBm)
3.0 GHz, 5V, 100%Idss
25
20
02 64 8 10 12 1814 16
Power Out (dBm)
5
4
3
NF (dB)
2
1
0
3 3.5 4 4.5 5 65.5
NF vs. Frequency
Frequency (GHz)
S-Parameters
S11
2.8
6.05
6.05
S22
2.8
11
10
9
10
7
10
MTBF (Hrs)
5
10
3
10
0 20 40 60 10080 120 140 160
Ground Tab Temperature (C)
5V, 100% Idss
MTBF vs. Temperature
S11 and S22
MTBF vs. Temperature
9
10
8
10
7
10
MTBF (hours)
Ground Tab
6
10
5
10
50 75 100 125 150 175 200
Temperature (°C)
Junction
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