WJ Company FH101 Datasheet

WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com December2001

FH101

Product Description

The FH101 is a high dynamic range FET pack­aged in a low cost surface mount package. The
combination of low noise figure and high out­put IP3 at the same bias point makes it ideal for
receiver and transmitter applications. The FH101
achieves +36 dBm IP3 at a mounting tempera­ture of 85˚C with an associated MTTF of >100
years. The package is a SOT-89. All devices are
100% RF & dc tested on a wafer.

The product is targeted for applications where
high linearity is required.

Product Features

•

36 dBm Output IP3

•

2.0 dB Noise Figure

•

18 dB Gain

•

18 dBm P1dB

•

DC-3 GHz Bandwidth

•

MTTF >100 Years

•

SOT-89 Surface Mount Package

Functional Diagram

High Dynamic Range FET

Advanced Product Information

Specifications

DC Electrical Parameter Units Minimum Typical Maximum Condition

Saturated Drain Current, Idss mA 100 140 170 Vgs = 0V
Transconductance, Gm mS - 120 ­Pinch Off Voltage, Vp V -3.0 -1.5 - Ids = 0.6 mA

RF Parameter Units Minimum Typical Maximum Condition

Small Signal Gain, Gss dB 16 18 ­1 dB Compression Point, P1dB dBm - 18 -
Third Order Output Intercept, OIP3 dBm 32 36 -
Noise Figure, NF dB - 2.0 -

Notes:

1. DC parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 volts

2. RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 volts, Test frequency = 800 MHz, 50 ohm system.

3. 3OIP Measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 slope r ule.

4. Device needs appropriate match to become unconditionally stable.

Ordering Information

Part No. Descr iption

FH101 High Dynamic Range FET

(Available in tape and reel)

The Communications Edge

™

Absolute Maximum Ratings

Parameter Rating Units

Drain to Source Voltage 8.0 Volt
Gate to Source Voltage -6.0 Volt
Gate Current 4.5 mA
Operating Case Temperature -40 to +85 °C
Storage Temperature -45 to +125 °C
Junction Temperature +155 °C
Thermal Resistance (θ

JC

) 85 °C/W

RF Input Power (continuous) +10 dBm

Operation of this device above any of these parameters may cause permanent damage.

4

123

Function Pin No.

Gate 1

Source 2

Drain 3

Source 4