WJ Company AP4 Datasheet
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX:408-577-6620 • e-mail:sales@wj.com • Web site: www.wj.com
February 2002
AP4
Product Description
The AP4 is a medium power FET packaged in
a high frequency surface mount package. The
combination of high output power and high
output IP3 at the same bias point makes it ideal
for receiver and transmitter applications. The
AP4 achieves +40 dBm OIP3 at a mounting
temperature of 80°C with an associated MTBF
of >100 years
3
. The package is a 3 X 3 Land
Grid Array (LGA). All devices are 100% RF
and DC tested. The product is targeted for
fixed wireless and W-LAN applications where
high linearity, medium power and high frequency are required.
Product Features
•
100-6000 MHz
•
+
40 dBm Output IP3
•
1.5 dB Noise Figure
•
16 dB Gain
•
+
27 dBm P1dB
•
MTBF >100 Years
•
3 X 3 LGA SMT Package
Functional Diagram
Medium Power High Dynamic Range FET
Specifications
DC Electrical Parameter Units Min. Typical Max.
Saturated Drain Current, Idss mA 440 580 760
Transconductance, Gm mS 280
Pinch Off Voltage, Vp V -5.0 -3.2
RF Parameter Units Min. Typical Max.
Small Signal Gain, Gss dB 14 16
Max Stable Gain, Gmsg dB 22
Output IP3 dBm 36 40
Output P1dB dBm 26 27
Noise Figure, NF dB 1.5
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted:
22°C with Vds = 8.0 volts, Ids = 200 mA, Test frequency = 800 MHz, 50 Ω system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz.The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. MTBF calculated with channel temperature at 155˚C.
Absolute Maximum Ratings
Parameter Rating
Drain to Source Voltage 10 V
Gate to Source Voltage -6.0 V
Operating Case Temperature -40 to +80°C
Storage Temperature -55 to +125°C
Input RF Power (continuous) +15 dBm
Gate Current 12 mA
Maximum DC Power 1.8 W
Operation of this device above any of these parameters may cause per manent damage.
Ordering Information
Part No. Description
AP4 Medium Power High Dynamic Range FET
(Available in tape and reel)
TOP VIEW
The Communications Edge
™
Advanced Product Information
Typical Parameters
Parameter Units Typical
Frequency GHz 5.8
S21 dB 9.3
S11 dB -15.5
S22 dB -16.2
Output IP3 dBm +38.5
Output P1dB dBm +21.2
Noise Figure dB 5.6
Typical parameters reflect performance in an application circuit.
Actual Size
Pin 1 indicator
Gate
(Neg bias)
All other pins including
center pin are grounded
Drain
(Pos bias)
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX:408-577-6620 • e-mail:sales@wj.com • Web site: www.wj.com
February 2002
AP4
Advanced Product Information
Performance Charts (Vds = 8 V, Ids = 200 mA, T = 22°C, unmatched 50 ohm system) unless noted
OIP3 vs. Frequency
45
40
35
30
OIP3 (dBm)
25
20
01234 65
Frequency (GHz)
8 V, 200 mA
5 V, 200 mA
OIP3 vs. Temperature
50
45
40
35
OIP3 (dBm)
8 V, 200 mA, 800 MHz
30
25
-40 -20 0 20 40 60 10080
Temperature (C)
Noise Figure vs. Frequency
7
6
5
4
3
Noise Figure (dB)
2
1
0
0123456
8 V, 200 mA
5 V, 200 mA
Frequency (GHz)
44
42
40
38
OIP3 (dBm)
8 V, 200 mA, 800 MHz
36
34
2468 1210 14 16 17 18
Gain vs. Frequency over Temperture
20
15
10
Gain (dB)
5
5 V, 200 mA
0
0231456
Frequency (GHz)
Room
4.5
6.0
S11
OIP3 vs. Power Out
Output Power (dBm)
S-Parameters
S22
P1dB vs. Frequency
30
25
20
15
P1dB (dBm)
10
8 V, 200 mA
5
0
01234 65
Frequency (GHz)
3.0
1.5
Frequency (GHz)
Start 0.1; Stop 6.0
0.1
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