WJ Communications AH103 Technical data

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AH103
High Gain, High Linearity ½ Watt Amplifier Product Information
Product Features
60 – 2700 MHz
+27 dBm P1dB
+46 dBm Output IP3
28.5 dB Gain @ 900 MHz
Excellent ACPR
MTTF > 100 Years
SOIC-8 Pkg w/ heat slug
Applications
Mobile Infrastructure
W-LAN / ISM / RFID
MDS / MMDS Infrastructure
Specifications
Product Description
The AH103 is a high gain, high linearity ½-Watt amplifier. This device is comprised of two individual MMIC amplifiers internally and can be used with an external interstage match for any of the mobile infrastructure frequency bands. The dual-stage amplifier achieves up to +46 dBm IP3 performance with 28.5 dB gain.
The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high linearity are required.
Typical Performance
The Communications Edge TM
Functional Diagram
1
2
AMP 1
3
4
Function Pin No.
Amp2 in 1
Amp1 out / Bias 1 2
Ground
RF in (Amp1 in) 4
RF out (Amp2 out) 6
Bias 2 7
AMP 2
3, 5, 8,
Backside copper
8
7
6
5
Parameter Units Min Typ Max
Frequency Range (2) MHz 60 800 2700 Gain dB 26.5 Input Return Loss dB Output Return Loss dB Output P1dB dBm +26 Output IP3 (3)
IS-95 Channel Power (4)
@ -45 dBc ACPR
Noise Figure dB 2.9 Supply Voltage (Amp1) V Supply Voltage (Amp2) V Operating Current (Amp1) mA 55 Operating Curre n t ( A mp2 ) mA 170 Thermal Resistance (5) °C / W Junction Temperature (6) °C
Test conditio ns unles s otherwise noted.
1. T = 25ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit.
2. The frequency of operation & bandwidth is determined by the external interstage match.
3. 3OIP measured with two tones at an out put power of +10 dBm/tone separated by 10 MHz. T he suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability
±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz.
5. The worst-case junction temperature for a g iven ground tab temperature can be calculated by multiplying the thermal resistance with the tot al package power d issipation and adding it to the t ab temperature. ie. At 85°C case temperature for a typ ical device, the worst-case junction temperature would be = 85°C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C.
6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
dBm +43 dBm
28.5 20 11
+27 +46
+21
+4.5
+9 75
200
100 230
20.6 160
Parameter Units Typical
Frequency MHz 900 1900 2140 2400 S21 dB S11 dB S22 dB Output P1dB dBm Output IP3 dBm
Channel Power
@ -45 dBc ACPR / ACLR
Noise Figure dB Supply Bias 1 Supply Bias 2 +9 V @ 200 mA
7. Typical parameters reflect performance in an application circuit.
8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
dBm
28.5 26 25
-15 -12 -11
-11 -11 -14 +27 +26.5 +26.5 +46 +45 +45
+21 +20 +17.2
2.9 3.7 3.5 3.6
+4.5 V @ 75 mA
24.7
-12
-17
+26
+43.3
Absolute Maximum Rating Ordering Information
Parameter Rating Part No. Description
Operating Case Temperature Storage Temperature DC Voltage (pin 2) +6 V DC Voltage (pin 6, 7) +11 V RF Input Power (continuous) 4 dB above Input P1dB Junction Temperature
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
-40 to +85 °C
-55 to +125 °C
+220°C
AH103 High Gain ½ Watt Amplifier
AH103-PCB900 0.7 – 1.0 GHz Evaluation Circuit AH103-PCB1750 1.7 – 1.8 GHz Evaluation Circuit AH103-PCB1900 1.8 – 2.0 GHz Evaluation Circuit AH103-PCB2140 2.1 – 2.2 GHz Evaluation Circuit
(available in tape and reel)
Specifications and information are subject to change without notice
AH103
The Communications Edge TM
High Gain, High Linearity ½ Watt Amplifier Product Information
Application Circuit
Ref. Desig. Component
R1 L2, L3 18 nH chip inductor C6, C10, C12 U1 WJ AH103 Amplifier
U2
5. All components are of size 0603.
6.
Ref. Desig. Component
L1 10 nH chip inductor L4 5.6 nH chi p inductor C1 C5, C11 5.6 pF chip capacitor
Notes:
1. DNP = Do not place this component.
2. Distance “D1” measured from U1, pin 4 to edge of Cx (where x = 2, 3, or 4).
3. A voltage regulator is used in this circuit (U2) to drop the +9 V to a +5 V usable supply for the first
4. A +4.5 V supply can also be used to bypass the 6.8 and can be applied to Test Point 2 (TP2).
a. D1 = 0.620” to C2 (for use with AH103-PCB1750)
The 2.0 pF input tuning capacitor is placed .045” to the left of “C2” shown on the silk screen. The s hunt capacitor is placed direc tly on the right and adjacent t o the input
blocking capacitor C1. b. D1 = 0.450” to C3 (for use with AH103-PCB1900) c. D1 = 0.310” to C4 (for use with AH103-PCB2140)
st
internal amplifier. It is permissible to remove the regulator and operate the 1 directly off of +5 V supply onto Test Point 1 (TP1). The use of a +5 V supply on the 1 stage requires a dropping resistor of 6.8 .
amplifier stage
st
amplifier
Evaluation Board PCB Layout
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
Specifications and information are subject to change without notice
C7 10 pF chip capacitor C9 1.5 pF chip capacitor C2, C3, C4, C8 DNP
1700 – 1800 MHz App. Circuit
Ref. Desig. Component
C1, C11 47 pF chip capacitor C2 2.0 pF chip capaci to r C5 C8 10 pF chip capacitor C3, C4, C7 C9, L1, L4
See note (2a) f or the proper placement of C2.
1800 – 2000 MHz App. Circuit
Ref. Desig. Component
C1, C11 47 pF chip capacitor C3 1.5 pF chip capaci to r C5 C8 10 pF chip capacitor C2, C4, C7 C9, L1, L4
2110 – 2140 MHz App. Circuit
Ref. Desig. Component
C1, C11 47 pF chip capacitor C4 1.2 pF chip capaci to r C5 C8 10 pF chip capacitor C2, C3. C7 C9, L1, L4
2.4 – 2.7 GHz Reference Circuit
Ref. Desig. Component
L1 1 pF chip capacitor C1 C5 22 pF chip capacitor C8 10 pF chip capacitor C11 47 pF chip capacitor C2, C3. C4 C7, C9, L4
Bill of Materials
All Application Circuits
6.8 chip resistor
.018 µF chip capacitor
+5V Regulator, National Semico nducto r NJM78L05
Other components not shown above are specific for the frequency band of interest.
AH103-PCB900
700 – 1000 MHz App. Circuit
0 chip resistor
AH103-PCB1750
0 chip resistor
DNP
AH103-PCB1900
0 chip resistor
DNP
AH103-PCB2140
0 chip resistor
DNP
0 chip resistor
DNP
AH103
High Gain, High Linearity ½ Watt Amplifier Product Information
Application Circuit: 700 – 1000 MHz
(AH103-PCB900)
Typical RF Performance
Frequency 880 MHz
S21 – Gain S11 – Input R e turn Loss S22 – Output Return Loss Output P1dB Output IP3
(+10 dBm / tone, 1 MHz spacing)
IS-95 Channel Power
@ -45 dBc ACPR
Noise Figure Supply Bias (Amp 1) +4.5 V @ 75 mA Supply Bias (Amp 2) +9 V @ 200 mA
30 25 20 15 10
5 0
-5
Magnitude (dB)
-10
-15
-20
-25
-30
0.6 0.7 0.8 0.9 1 1.1 1.2
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
880 MHz ACPR vs Channel Power
-30
Single Carrier and 4-Carrier IS-95
-35
-40
-45
-50
-55
-60
ACPR (dBc)
-65 Single Carrier
-70
-75
-80
10 12 14 16 18 20
Channel Output Power (dBm)
Single Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±750 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz
Four-Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability ±2.60 MHz offset, 30 kHz bandwidth, Channel BW = 4.92 MHz
S-Parameters
Freque ncy (GHz)
28.5 dB
-15 dB
-11 dB +27 dBm
+45 dBm +21 dBm
2.9 dB
4 Carrier
The Communications Edge TM
Application Circuit: 1.8 – 2.0 GHz
(AH103-PCB1900)
Typical RF Performance
Frequency 1960 MHz
S21 – Gain S11 – Input R e turn Loss S22 – Output Return Loss Output P1dB Output IP3
(+10 dBm / tone, 1 MHz spacing)
IS-95 Channel Power
@ -45 dBc ACPR
Noise Figure Supply Bias (Amp 1) +4.5 V @ 75 mA Supply Bias (Amp 2) +9 V @ 200 mA
30 25 20 15 10
5 0
Magnitude (dB)
-5
-10
-15
-20
1.6 1.7 1.8 1.9 2 2.1 2.2
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
S-Parameters
Freque ncy (GHz)
1960 MHz ACPR vs Channel Power
-30
-35
-40
-45
-50
-55
-60
ACPR (dBc)
-65
-70
-75
-80 10 12 14 16 18 20
Single Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability ±885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz
Four-Carrier Signal: IS-95, 9 Channels Forward, Pk/Avg Ratio = 10.2 dB at a .001% probability ±2.76 MHz offset, 30 kHz bandwidth, Channel BW = 4.98 MHz
Single Carrier and 4-Carrier IS-95
Single Carrier
Channel Output Power (dBm)
26 dB
-12 dB
-11 dB +26.5 dBm
+45 dBm +20 dBm
3.7 dB
4 Carrier
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
Specifications and information are subject to change without notice
AH103
High Gain, High Linearity ½ Watt Amplifier Product Information
Application Circuit: 2110 – 2170 MHz
(AH103-PCB2140)
Typical RF Performance
Frequency 2140 MHz
S21 – Gain S11 – Input R e turn Loss S22 – Output Return Loss Output P1dB Output IP3
(+10 dBm / tone, 1 MHz spacing)
Noise Figure Supply Bias (Amp 1) +4.5 V @ 75 mA Supply Bias (Amp 2) +9 V @ 200 mA
30 25 20 15 10
5 0
Magnitude (dB)
-5
-10
-15
-20
1.9 2 2.1 2.2 2.3 2.4
-40 freq = 2140 MHz
S-Parameters
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
Freque ncy (GHz)
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1 +64 DP CH , ± 5 MHz offset
25 dB
-11 dB
-14 dB +26.5 dBm
+45 dBm
3.5 dB
The Communications Edge TM
Reference Design: 2.4 – 2.7 GHz
Typical RF Performance
Frequency MHz 2400 2700
S21 – Gain dB 24.7 23.5 S11 – Input Return Loss dB -12 -15 S22 – Output Return Loss dB -17 -16 Output P1dB dBm +26 +25.2 Output IP3
(+10 dBm / tone, 1 MHz spacing)
Noise Figure dB 3.6 3.6 Supply Bias (Amp 1) 4.5 V @ 75 mA Supply Bias (Amp 2) 9 V @ 200 mA
30 25 20 15 10
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
5 0
Magnitude (dB)
-5
-10
-15
-20
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
2.4009 GHz
24.72 dB
dBm +43.3 +41.9
S-Parameters
2.7008 GHz
23.53 dB
Freque ncy (GHz)
-45
-50
ACPR (dBc)
-55
-60
12 13 14 15 16 17 18
Output Channel Power (dBm)
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
Specifications and information are subject to change without notice
AH103
The Communications Edge TM
High Gain, High Linearity ½ Watt Amplifier Product Information
Outline Drawing
The component will be marked with an “AH103” designator followed by a four- or five-digit alpha­numeric lot code on the top surface of the package. Tape and reel specifications for this part is located on the website in the “Application Notes” section.
Product Marking
ESD / MSL Information
ESD Classification: Class 1B Value: Passes Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114
ESD Classification: Class III Value: Passes Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 1 at +235 °C convection reflow Standard: JEDEC Standard J-STD-020B
!
500 V to <1000 V
!
500 V to <1000 V
Functional Pin Layout
Mounting Configuration / Land Pattern
The backside paddle is the Source and should be grounded for thermal and electrical purposes. All other pins should be grounded on the PCB.
Pin Function
1 Amp2 input 2 Amp1 output / Bias Amp1 3 Ground 4 RF input (Amp1 input) 5 Ground 6 RF output (Amp2 output) 7 Bias Amp2 8 Ground
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
Specifications and information are subject to change without notice
AH103
The Communications Edge TM
High Gain, High Linearity ½ Watt Amplifier Product Information
Typical Device Data
Typical AH103 Performance Chain Analysis at 900 MHz
1
2
AMP 1
3
4
S-Parameters (Amplifier #1, VD = +4.5 V, ID = 75 mA, T = 25°C, calibrated to device leads, pin 4 = port 1, pin 2 = port 2)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -4.86 -26.48 15.26 166.07 -21.98 27.52 -9.70 -36.91 200 -7.73 -22.56 14.09 165.44 -20.82 4.55 -15.06 -23.28 400 -6.98 -31.07 13.81 158.26 -20.79 -1.20 -13.38 -23.85 600 -7.02 -42.34 13.67 149.51 -20.87 -5.43 -13.42 -28.27 800 -7.16 -54.83 13.52 140.22 -20.74 -9.01 -13.71 -34.42
1000 -7.19 -67.46 13.36 131.15 -20.75 -12.46 -13.81 -40.37 1200 -7.17 -79.27 13.18 122.10 -20.61 -15.68 -14.16 -45.64 1400 -7.41 -91.82 13.04 113.28 -20.49 -19.43 -14.82 -50.24 1600 -7.64 -105.01 12.84 104.13 -20.43 -23.02 -15.82 -55.50 1800 -7.89 -118.56 12.65 95.51 -20.23 -27.00 -17.15 -60.75 2000 -8.01 -125.93 12.51 87.63 -20.10 -29.55 -17.66 -53.33 2200 -8.49 -142.46 12.36 78.62 -19.93 -34.96 -20.96 -54.42 2400 -8.67 -160.24 12.13 69.65 -19.89 -38.99 -26.00 -54.24 2600 -8.68 -172.38 11.93 63.44 -19.88 -43.41 -33.58 -50.38 2800 -8.41 169.78 11.67 54.46 -19.87 -47.77 -34.93 72.34 3000 -7.99 153.13 11.27 45.65 -19.92 -53.05 -25.07 91.10
S-Parameters (Amplifier #2, VD = +9 V, ID = 200 mA, T = 25°C, calib rated to device leads, pin 1 = port 1, pin 7 = port 2)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -14.89 -61.31 15.70 167.65 -19.34 7.31 -20.46 -69.94 200 -18.44 -66.85 15.25 161.10 -19.19 -8.11 -27.00 35.96 400 -13.76 -79.48 14.98 146.18 -19.43 -18.63 -18.71 6.17 600 -12.08 -100.14 14.63 131.18 -19.72 -29.44 -16.02 -1.40 800 -10.77 -119.25 14.23 116.54 -20.04 -39.85 -14.15 -10.84
1000 -9.63 -134.77 13.84 102.40 -20.41 -49.54 -12.62 -22.52 1200 -8.84 -148.91 13.45 88.71 -20.82 -58.10 -11.52 -32.78 1400 -8.26 -163.49 13.12 75.19 -21.26 -67.89 -10.66 -42.36 1600 -7.70 -177.35 12.79 61.97 -21.81 -76.50 -10.11 -52.56 1800 -7.18 169.87 12.46 48.61 -22.20 -86.90 -9.60 -63.61 2000 -7.12 156.94 12.32 35.83 -22.71 -93.31 -9.46 -69.21 2200 -6.52 142.96 12.06 21.94 -23.51 -103.96 -9.28 -79.85 2400 -5.85 131.77 11.71 8.30 -24.26 -113.83 -8.99 -93.56 2600 -5.38 124.67 11.47 -1.71 -24.94 -120.76 -8.74 -104.09 2800 -4.72 115.12 11.10 -15.80 -25.66 -129.36 -8.43 -118.28 3000 -4.13 106.69 10.56 -30.06 -27.18 -137.91 -8.04 -135.08
AMP 2
8
7
6
5
Stage
Amplifier 1 14.5 18 39 2.7 +4.5 75 14.5 18 39 2.7 Amplifier 2 14 27 46 3.1 +9 200 28.5 25.8 45.2 2.8
AH103 Cumulative Performance 275 28.5 +25.8 +45.2 2.8
Gain
(dB)
Output
P1dB
(dBm)
Output
IP3
(dBm)
NF
(dB)
Voltage
(V)
Current
(mA)
Cumulative Performance
Gain
(dB)
Output
P1dB
(dBm)
Output
(dBm)
IP3
NF
(dB)
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com November 2003
Specifications and information are subject to change without notice
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