Wing Shing Electronic Co manufacturer of power semiconductors BUT12AF Datasheet

GENERAL DESCRIPTION

V

B

E

V

I

I

P

m

b

V

I

V

t

V

B

E

V

V

I

I

I

P

T

T

I

B

E

C

E

CESMmax

I

j

V

C

V

V

h

C

E

V

f

C

E

C

C

B

t

t

BUT12AF

SILICON DIFFUSED POWER TRANSISTOR

Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.

QUICK REFERENCE DATA

TO-220F

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V

= 0V 1000 V
Collector-emitter voltage (open base) 450 V
Collector current (DC) 8 A
Collector current peak value 20 A
Total power dissipation T

25 100 W
Collector-emitter saturation voltage IC = 6.0A; IB = 1.2A 1.5 V
Collector saturation current f = 16KHz A
Diode forward voltage V
Fall time IC=6A,IB1=-IB2=1.2A,VCC=150V 1.0 s

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base) 450 V
Emitter-base voltage(open collector) 5 V
Collector current (DC) 8 A
Base current (DC) 4 A
Base current peak value 8 A
Total power dissipation Tmb 25 40 W
Storage temperature -55 150
Junction temperature 150

= 0V 1000 V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter cut-off current V

Collector-emitter sustaining voltage IB = 0A; I

Collector-emitter saturation voltages IC = 6.0A; IB = 1.2A 1.5 V
Base-emitter satuation voltage IC = 6.0A; IB = 1.2A 1.5 V
DC current gain IC = 1.0A; V
Diode forward voltage V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V

Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=6A,IB1=-IB2=1.2A,VCC=150V

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Homepage: http://www.wingshing.com E-mail: [e-mail]

= 0V; V

VBE = 0V; VCE = V

= 125

T

L = 25mH

= 10V pF

IC=6A,IB1=-IB2=1.2A,VCC=150V 5.0 s

= V

CESMmax

1.0 mA

2.0 mA

= 100mA V

= 5V 10 50

= 10V 5 MHz

1.0 s