Wing Shing Electronic Co manufacturer of power semiconductors BUT11, BUT11A Datasheet
BUT11/11A NPN SILICON TRANSISTOR
HIGH VOLTAGE POWER
SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
Characteristic Symbol Rating Unit
Collector-Emitter Voltage:BUT11
:BUT11A
Collector-Emitter Voltage:BUT11
:BUT11A
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
VCES
VCEO
VEBO
IC
IC
IB
IB
PC
Tj
Tstg
850
1000
400
450
9
5
10
2
4
100
150
-65~150
TO-220
V
V
V
V
V
A
A
A
A
W
°c
°c
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic Symbol Test Condition Min Typ Max Unit
Collector Emitter Sustaining Voltage :BUT11
:BUTIIA
Collector Cutoff Current :BUT11
:BUTIIA
Emitter Cutoff Current
Collector Emitter Saturation Voltage :BUT11
:BUTIIA
Base- Emitter Saturation Voltage :BUT11
:BUTIIA
Turn-On Time
Storage Time
Fall Time
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
V
CEO(SUS)
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
t
t
IC=100mA, IB=0
= 850V , VEB=
V
CE
0
V
= 1000V , VEB= 0
CE
V
= 9V , IC=0
EB
IC=3A, IB=0.6A
I
=2.5A,
C
I
=0.5A
B
I
on
stg
t
f
=3A, IB=0.6A
C
=2.5A,
C
I
I
=0.5A
B
V
= 250V , IC=2.5A
CC
I
= IB2=0.5A
B1
400
450
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
mA
mA
µ
µ
µ
µ
V
V
A
V
V
V
V
S
S
S
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