Wing Shing Electronic Co manufacturer of power semiconductors BU508DF Datasheet

GENERAL DESCRIPTION
B
E
-
-
-
-
m
b
-
-
F
B
E
B
E
C
E
CESMmax
j
C
C
E
C
E
C
B
BU508DF
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
TOP-3Fa
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation T Collector-emitter saturation voltage IC = 4.5A; IB = 2.0A
= 0V
25
1500 V
600 V
8 A 15 A 60 W
1.5 V Collector saturation current f = 16KHz - A Diode forward voltage I
= 4.0A 2.0 V
Fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V Collector-emitter voltage (open base) - 600 V Collector current (DC) - 8 A Collector current peak value - 15 A Base current (DC) - 4 A Base current peak value - 6 A Total power dissipation Tmb 25 - 60 W Storage temperature -55 150 Junction temperature - 150
= 0V - 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 4.5A; IB = 2.0A - 1.5 V Base-emitter satuation voltage IC = 4.5A; IB = 2.0A - 2.5 V DC current gain IC = 1A; V Diode forward voltage IF = 4.0A 2.0 V Transition frequency at f = 1MHz IC = 0.1A; V Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V 135 pF
IC=4.5A,IB1=-IB2=1.2A,VCC=140V 7.0 s
= V
CESMmax
- 1.0 mA
- 2.0 mA
= 100mA - V
= 5V 8 30
= 10V 3 MHz
1.0 s
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