Wing Shing Electronic Co manufacturer of power semiconductors BU508AF Datasheet

GENERAL DESCRIPTION

V

B

E

-

V

-

I

-

I

-

P

m

b

-

V

-

I

V

t

V

B

E

V

I

I

I

I

P

T

T

I

B

E

C

E

CESMmax

I

j

V

C

V

V

h

C

E

V

f

C

E

C

C

B

t

t

BU508AF

SILICON DIFFUSED POWER TRANSISTOR

Highvoltage,high-speed switching npn transistors in
a plastic envelope,primarily for use in switching power
circuites of colour television receivers

QUICK REFERENCE DATA

TOP-3Fa

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 4.5A; IB = 2.0A

= 0V

25

1500 V

600 V

8 A
15 A
60 W

1.5 V
Collector saturation current f = 16KHz A
Diode forward voltage V
Fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V 1.0 s

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Tmb 25 - 60 W
Storage temperature -55 150
Junction temperature - 150

= 0V - 1500 V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector cut-off current V

VBE = 0V; VCE = V

= 125

T

Collector-emitter sustaining voltage IB = 0A; I

L = 25mH
Collector-emitter saturation voltages IC = 4.5A; IB = 2.0A - 1.5 V
Base-emitter satuation voltage IC = 4.5A; IB = 2.0A - 2.5 V
DC current gain IC = 1A; V
Diode forward voltage V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V

Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

IC=4.5A,IB1=-IB2=1.2A,VCC=140V 7.0 s

= 0V; V

= V

CESMmax

- 1.0 mA

- 2.0 mA

= 100mA - V

= 5V 8 40

= 10V 3 MHz

= 10V 135 pF

1.0 s