Wing Shing Electronic Co manufacturer of power semiconductors BU406, BU406H, BU408 Datasheet

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE

ABSOLUTE MAXIMUM RATINGS (Ta=25°CCCC)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)

Collector Dissipation (Tc=25
Junction Temperature
Storage Temperature

CBO

V
V

V

CEO
EBO

I

C

I

CM

I

B

P

C

T

j

°C

)

Tstg

400
200

6
7

10

4

60

150

-65~150

TO-220

V
V
V
A
A
A

W

°C
°C

ELECTRICAL CHARACTERISTICS (Ta=25°CCCC)

Characterristic Symbol Test Condition Min Typ Max Unit

I

V

V

f
t

I

CES

EBO

CE(sat)

BE(sat)

T

off

= 400V , VEB=

CE

V
0
V

= 250V , VEB=

CE

0
V

= 250V , VEB=

CE

0
Tc=150



VEB= 6V , IC=0
IC=5A, IB=0.5A
I

=5A, IB=0.8A

C

=6A, IB=1.2A

C

I
I

=5A, IB=0.5A

C

I

=5A, IB=0.8A

C

I

=6A, IB=1.2A

C

V

= 10V ,

CE

=500mA

C

I
I

=5A, IB=0.5A

C

I

=5A, IB=0.8A

C

I

=6A, IB=1.2A

C

5

100

1

1
1
1
1

1.2

1.2

1.5

10

0.75

0.4

0.4

Collector Cutoff Current (VBE=0)

Emitter Cutoff Current(I

=0)

C

Collector Emitter Saturation Voltage :BU406
:BU406H
:BU408
Base- Emitter Saturation Voltage :BU406
:BU406H
:BU408
Current Gain Bandwith Product
Turn-Off Time :BU406
:BU406H
:BU408

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mA

µ

A

mA

mA

V
V

V
V
V
V

MHZ

µ

S

µ

S

µ

S