Wing Shing Electronic Co manufacturer of power semiconductors BU407 Datasheet

GENERAL DESCRIPTION

V

V

I

I

P

V

V

t

V

V

V

I

I

P

T

T

I

C

B

I

V

V

B

h

C

E

f

C

C

B

t

B(end

)

C

C

t

t

B(end

)

C

C

BU407

SILICON EPITAXIAL PLANNAR TRANSISTOR

High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose

TO-220

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V 330 V
Collector-emitter voltage (open base) 150 V
Collector current (DC) 7 A
Collector current peak value 15 A
Total power dissipation Tmb25 60 W
Collector-emitter saturation voltage IC = 5.0A; IB = 0.5A 1.0 V
Diode forward voltage V
Fall time IC=5A,-I

=0.5A,VCC=60V 0.75 s

B(end)

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 330 V
Collector-emitter voltage (open base) - 150 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 7 A
Base current (DC) - 4 A
Total power dissipation Tmb 25 - 60 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V 1.0 mA
Collector-emitter breakdown voltage IC=10mA 150 V
Collector-emitter saturation voltages IC = 5.0A; I
DC current gain IC = 2.0A; V
Transition frequency at f = 5MHz IC = 0.5A; VCE = 10V 10 MHz
Collector capacitance at f = 1MHz V
On times IC=5A,-I
Tum-off storage time IC=5A,-I
Fall time IC=5A,-I

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

=400V 5.0 mA

= 0.5A 1.0 V

= 10V pF

=0.5A,V
=0.5A,VCC=60V us

B(end)

=0.5A,V

= 5V 30

=60V us

=60V 0.75 us