Wing Shing Electronic Co manufacturer of power semiconductors BU406D Datasheet

BU406D NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE

ABSOLUTE MAXIMUM RATINGS (Ta=25°CCCC)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO

IC

ICM

IB

PC

Tj

Tstg

400
400

6
7

10

4

60

150

-65~150

TO-220

V
V
V
A
A
A

W

°C
°C

ELECTRICAL CHARACTERISTICS (Ta=25°CCCC)

Characterristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current (VBE=0)
Emitter Cutoff Cu rrent(IC=0)
Collector Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain Bandwith Product
Turn-Off Time

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ICES

IEBO

VCE(sat)
VBE(sat)
fT
toff

VCE= 400V , VEB= 0
VEB= 6V , IC=0
IC=5A, IB=0.5A
IC=5A, IB=1.2A
VCE= 10V, IC=500mA
IC=5A, IB=0.5A
IC=5A, IB=0.8A
IC=6A, IB=1.2A

10

5
1

1.2

1.5
MHZ

0.75

0.4

0.4

mA
mA

V

µS
µS
µS