Wing Shing Electronic Co manufacturer of power semiconductors BU208D Datasheet

GENERAL DESCRIPTION

V

B

E

V

I

I

P

m

b

V

I

V

F

t

V

B

E

V

V

I

I

I

P

T

T

I

B

E

C

E

CESMmax

I

j

V

C

V

V

h

C

E

V

f

C

E

C

C

B

t

t

BU208D

SILICON DIFFUSED POWER TRANSISTOR

Highvoltage,high-speed switching npn transistors in a
metal envelope with integrated efficiency diode,prim­arily for use in horizontal deflection circuites of colour
television receivers

TO-3

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V

= 0V 1500 V
Collector-emitter voltage (open base) 600 V
Collector current (DC) 5 A
Collector current peak value 7.5 A
Total power dissipation T

25 125 W
Collector-emitter saturation voltage IC = 4.5A; IB = 2.0A 1.0 V
Collector saturation current f = 16KHz A
Diode forward voltage I

= 4.5A 1.5 V

Fall time IC=4.5A,IB1=-1/2IB2=1.8A,VCC=100V 1.0 s

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base) 600 V
Emitter-base voltage(open collector) 5 V
Collector current (DC) 5 A
Base current (DC) 2 A
Base current peak value 4 A
Total power dissipation Tmb 25 125 W
Storage temperature -55 150
Junction temperature 150

= 0V 1500 V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter cut-off current V

Collector-emitter sustaining voltage IB = 0A; I

Collector-emitter saturation voltages IC = 4.5A; IB = 2.0A 1.0 V
Base-emitter satuation voltage IC = 4.5A; IB = 2A 1.5 V
DC current gain IC = 1.0A; V
Diode forward voltage IF = 4.5A 1.5 V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V

Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time

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= 0V; V

VBE = 0V; VCE = V

= 125

T

L = 25mH

= 10V pF

IC=4.5A,IB1=-1/2IB2=1.8A,VCC=100V 8.0 s

=4.5A,IB1=-1/2IB2=1.8A,VCC=100V

C

= V

CESMmax

1.0 mA

2.0 mA

= 100mA V

= 5V 8 30

= 10V 3 MHz

1.0 s