Wing Shing Electronic Co manufacturer of power semiconductors 9014 Datasheet

C

C

9014

NPN SILICON TRANSISTOR

FEATURES

TO 92

Power dissipation
P

: 0.4 W Tamb=25

CM

Collector current
I

: 0.1 A

CM

Collector-base voltage
V

(BR)CBO

: 50 V

ELECTRICAL CHARACTERISTICS

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

1.EMITTER

2.BASE

3.COLLECTOR

1 2 3

Tamb=25 unless otherwise specified

Symbol Test conditions MIN TYP MAX UNIT

V(BR)

V(BR)

V(BR)

I

CBO

CBO

CEO

EBO

Ic= 100 A IE=0

Ic= 0. 1 mA IB=0 45 V

IE= 100 A IC=0

VCB=50 V , IE=0 0.1

50 V

5 V

A

Collector cut-off current

Emitter cut-off current

DC current gain(note)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I

CEO

I

EBO

H

FE 1

V

(sat) IC= 100mA, IB= 5 mA 0.3 V

CE

V

(sat) IC= 100 mA, IB= 5mA 1 V

BE

f

T

VCE=35 V , IB=0 0.1

VEB= 3 V IC=0 0.1

V

= 5 V, IC= 1mA 60 1000

E

V

= 5 V, IC= 10mA

E

f =30MHz

CLASSIFICATION OF H

Rank

Range

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FE(1)

ABCD

60-150 100-300 200-600 400-1000

A

A

150 MHz