Wing Shing Electronic Co manufacturer of power semiconductors 2SD870 Datasheet

GENERAL DESCRIPTION

V

B

E

-

V

-

I

-

I

-AP

m

b

-

V

-

I

V

F

t

V

B

E

V

I

I

I

I

P

T

T

I

B

E

C

E

CESMmax

I

j

V

C

V

V

h

C

E

V

f

C

E

C

C

B

t

t

2SD870

SILICON DIFFUSED POWER TRANSISTOR

Highvoltage,high-speed switching npn transistors in a
metal envelope with integrated efficiency diode,prim­arily for use in horizontal deflection circuites of colour
television receivers

TO-3

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)

= 0V

1500 V

600 V

5 A
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A

25

50 W

5 V
Collector saturation current f = 16KHz A
Diode forward voltage I
Fall time I

= 4.0A 2 V

= 4.0A; f = 16KHz 1.0 s

Csat

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 5 A
Collector current peak value - A
Base current (DC) - 1 A
Base current peak value - A
Total power dissipation Tmb 25 - 50 W
Storage temperature -55 150
Junction temperature - 150

= 0V - 1500 V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter cut-off current V

Collector-emitter sustaining voltage IB = 0A; I

Collector-emitter saturation voltages IC = 4.0A; IB =0.8A - 5 V
Base-emitter satuation voltage IC = 4.0A; IB = 0.8A - 1.5 V
DC current gain IC = 1.0A; V
Diode forward voltage IF = 4.0A 2 V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V

Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=4A,IB1=-IB2=0.8A,VCC=105V

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= 0V; V

VBE = 0V; VCE = V

= 125

T

L = 25mH

= 10V 165 pF

IC=4A,IB1=-IB2=0.8A,VCC=105V - s

= V

CESMmax

- 0.1 mA

- 0.2 mA

= 100mA - V

= 5V 8 30

= 10V 1 - MHz

1.0 s