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GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a
metal envelope , primarily for use in switching power
circuites of colour television receivers
TO-3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
= 0V
1500 V
600 V
5 A
Collector current peak value
Total power dissipation T
25
50 W
Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A 5 V
Collector saturation current f = 16KHz - A
Diode forward voltage V
Fall time I
= 4.0A; f = 16KHz 1.0 s
Csat
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) 5 A
Collector current peak value - A
Base current (DC) - 1 A
Base current peak value - A
Total power dissipation Tmb 25 - 50 W
Storage temperature -55 150
Junction temperature - 150
= 0V - 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 4.0A; IB = 0.8A - 5 V
Base-emitter satuation voltage IC = 4.0A; IB = 0.8A - 1.5 V
DC current gain IC = 1.0A; V
Diode forward voltage V
Transition frequency at f = 1MHz IC =1.0A; V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=4.0A,IB1=-IB2=0.8A,VCC=105V
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V 165 pF
IC=4.0A,IB1=-IB2=0.8A,VCC=105V - s
= V
CESMmax
- 0.1 mA
- 0.2 mA
= 100mA - V
= 5V 8 40
= 10V 1.0 - MHz
1.0 s