Wing Shing Electronic Co manufacturer of power semiconductors 2SD717 Datasheet

GENERAL DESCRIPTION

g

j

(BR)

2SD717

Silicon Epitaxial Planar Transistor

Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
V
t

CBO

CEO
C
CM

tot

CEsat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 4.0A; IB=0.4A
Diode for war d vol ta ge IF = 3.5A 1.5 2.0 V
Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 0.4 1.0- s

TO-3P(I)D

-

-

-

70 V
70 V
10 A

-

-

-

80 W

2V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
V
I
I
P
T
T

CESM
CEO

EBO
C
B

tot

st

Collector-emitter voltage peak value VBE = 0V - 70 V
Collector-emitter voltage (open base) - 70 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 10 A
Base current (DC) - 2.5 A
Total power dissipation Tmb 25 -80W
Storage temperature -55 150
Junction temperature - 150

A

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CBO

I

EBO

V

CEO

V

CEsat

h

FE

f

T

C

c

t

on

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector-base cut-off current VCB=70V - 0.2 mA
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 70 V
Collector-emitter saturation voltages IC = 4.0A; IB = 0.4A - 3 V
DC current gain IC = 1A; VCE = 5V 50 240
Transition frequency at f = 5MHz IC = 1A; VCE = 12V 10 - MHz
Collector capacitance at f = 1MHz VCB = 10V 350 - pF
On times IC=4A,IB1=-IB2=0.4A,VCC=30V 0.3 us
Tum-off storage time IC=4A,IB1=-IB2=0.4A,VCC=30V 2.5 us
Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 0.4 us