Wing Shing Electronic Co manufacturer of power semiconductors 2SD716 Datasheet

GENERAL DESCRIPTION

V

-

V

-

I

-

I

-AP

-

V

-

V

t

V

V

V

I

I

P

T

T

I

C

B

I

V

V

B

h

C

E

f

C

C

B

t

t

t

2SD716
SILICON EPITAXIAL PLANAR TRANSISTOR

Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 3.0A; IB = 0.3A
Diode forward voltage IF = 3.0A 1.5 2.0 V
Fall time - s

TO-3P(I)D

100 V
100 V

6 A

60 W

2 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 100 V
Collector-emitter voltage (open base) - 100 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 6 A
Base current (DC) - 1.5 A
Total power dissipation Tmb 25 - 60 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 100 V
Collector-emitter saturation voltages IC = 3.0A; I
DC current gain IC = 1A; V
Transition frequency at f = 5MHz IC = 1A; VCE = 12V 12 - MHz
Collector capacitance at f = 1MHz V
On times us
Tum-off storage time us
Fall time us

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

=100V - 0.2 mA

= 10V 150 pF

= 0.3A - 2 V

= 5V 50 250