Wing Shing Electronic Co manufacturer of power semiconductors 2SD389 Datasheet

2SD389 NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

!

Complement to 2SB507

TO-220

ABSOLUTE MAXIMUM RATINGS (TA=25℃℃℃℃)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipat ion (Tc=25
Junction Temperature
Storage Temperature

℃)

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

Tstg

60
60

7
4

30

150

-50~150

V
V
V
A

W

℃℃℃℃
℃℃℃℃

ELECTRICAL CHARACTERISTICS (TA=25℃℃℃℃)

Characteristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product

I

V

CBO

I

EBO

h

FE1

CE(sat)

f

T

VCB= 60V , IE=0

= 7V , IC=0

EB

V
VCE= 3V , IC=1A

=2A , IB=0.2A

C

I

= 5V , IC=0.5A

CE

V

100
100

70

1.0

18

µ

A

µ

A

V
MHZ

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