2SD313 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
Complement to 2SB507
!
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
Junction Temperature
Storage Temperature
o
C
)
CBO
V
CEO
V
EBO
V
C
I
C
P
j
T
Tstg
60
60
7
3
30
150
-50~150
V
V
V
A
W
o
o
C
C
TO-220
ELECTRICAL CHARACTERISTICS (TA=25oC)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Wing Shing Computer Components Co., (H. K )L td . TeL (852)234 1 92 76 Fax : (852)27 97 8153 .
Home page: http: / /www.wingshing.com e_ mail: wsccltd@hkstar.com
I
I
h
V
CBO
EBO
FE1
CE(sat)
T
f
VCB= 60V , IE=0
EB
= 7V , IC=0
V
VCE= 2V , IC=1A
I
C
=2A ,
B
=0.2A
I
V
= 5V ,
CE
I
=0.5A
C
40
8
100
100
320
1.0
µ
A
µ
A