GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,primÂarily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
TO-3PFM
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 3.0A; IB = 0.8A
= 0V
25
1500 V
600 V
3 A
6 A
40 W
5 V
Collector saturation current f = 16KHz - A
Diode forward voltage I
Fall time I
= 3.0A 1.6 2.0 V
= 3.0A; f = 16KHz 1.0 s
Csat
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 3 A
Collector current peak value - 6 A
Base current (DC) - A
Base current peak value - A
Total power dissipation Tmb 25 - 40 W
Storage temperature -65 150
Junction temperature - 150
= 0V - 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
Collector cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 3.0A; IB = 0.8A - 5 V
Base-emitter satuation voltage IC = 3.0A; IB = 0.8A - 1.5 V
DC current gain IC = 300mA; V
Diode forward voltage IF = 3.0A 1.6 2.0 V
Transition frequency at f = 5MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=3A,I
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= 0V; V
VBE = 0V; VCE = V
= 125
T
= V
CESMmax
- 1.0 mA
- 2.5 mA
= 100mA - V
L = 25mH
= 5V 8
= 10V 3 - MHz
= 10V 90 - pF
IC=3A,I
=0.8A,VCC=105V - s
B(end)
=0.8A,VCC=105V
B(end)
0.7 1.0 s