GENERAL DESCRIPTION
SILICON DIFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a
plastic envelope ,primarily for use in horizontal
deflection circuites of colour television receivers
QUICK REFERENCE DATA
TO-3PML
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
= 0V 1500 V
Collector-emitter voltage (open base) 600 V
Collector current (DC) 8 A
Collector current peak value 16 A
Total power dissipation T
25 70 W
Collector-emitter saturation voltage IC = 6.0A; IB = 1.5A 5.0 V
Collector saturation current f = 16KHz A
Diode forward voltage V
Fall time IC=4A,IB1=-1/2IB2=1.2A,VCC=100V 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) 600 V
Emitter-base voltage(open collector) 5 V
Collector current (DC) 8 A
Base current (DC) 2 A
Base current peak value 4 A
Total power dissipation Tmb 25 70 W
Storage temperature -55 150
Junction temperature 150
= 0V 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 6.0A; IB = 1.5A 5.0 V
Base-emitter satuation voltage IC = 6.0A; IB = 1.5A 1.5 V
DC current gain IC = 1.0A; V
Diode forward voltage V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
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Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V pF
IC=4A,IB1=-1/2IB2=1.2A,VCC=100V s
=4A,IB1=-1/2IB2=1.2A,VCC=100V
C
= V
CESMmax
1.0 mA
2.0 mA
= 100mA V
= 5V 10 40
= 10V 3 MHz
1.0 s