Wing Shing Electronic Co manufacturer of power semiconductors 2SD1886 Datasheet

GENERAL DESCRIPTION
B
E
I
I
m
b
I
t
B
E
I
I
I
T
T
I
B
E
C
E
CESMmax
I
j
C
h
C
E
f
C
E
C
C
B
t
t
2SD1886
SILICON DIFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a plastic envelope ,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
TO-3PML
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
= 0V 1500 V Collector-emitter voltage (open base) 600 V Collector current (DC) 8 A Collector current peak value 16 A Total power dissipation T
25 70 W Collector-emitter saturation voltage IC = 6.0A; IB = 1.5A 5.0 V Collector saturation current f = 16KHz A Diode forward voltage V Fall time IC=4A,IB1=-1/2IB2=1.2A,VCC=100V 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V Collector-emitter voltage (open base) 600 V Emitter-base voltage(open collector) 5 V Collector current (DC) 8 A Base current (DC) 2 A Base current peak value 4 A Total power dissipation Tmb 25 70 W Storage temperature -55 150 Junction temperature 150
= 0V 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 6.0A; IB = 1.5A 5.0 V Base-emitter satuation voltage IC = 6.0A; IB = 1.5A 1.5 V DC current gain IC = 1.0A; V Diode forward voltage V Transition frequency at f = 1MHz IC = 0.1A; V Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V pF
IC=4A,IB1=-1/2IB2=1.2A,VCC=100V s
=4A,IB1=-1/2IB2=1.2A,VCC=100V
C
= V
CESMmax
1.0 mA
2.0 mA
= 100mA V
= 5V 10 40
= 10V 3 MHz
1.0 s
Loading...