Wing Shing Electronic Co manufacturer of power semiconductors 2SD1710 Datasheet

GENERAL DESCRIPTION

V

B

E

-

V

-

I

-

I

-

P

m

b

-

V

-

I

V

F

t

V

B

E

V

I

I

I

I

P

T

T

I

B

E

C

E

CESMmax

I

j

V

C

V

V

h

C

E

V

f

C

E

C

C

B

t

t

2SD1710

Silicon Diffused Power Transistor

Highvoltage,high-speed switching npn transistors in a
plastic package,pimarily for use in horizontal deflection
circuites of colour television receivers

QUICK REFERENCE DATA

TO-3PML

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 4.0A; IB = 1.0A

= 0V

25

1500 V

600 V

5 A
10 A
50 W

5.0 V
Collector saturation current f = 16KHz - - A
Diode forward voltage I
Fall time I

= 4.5A 1.6 2.0 V

= 4.5A; f = 16KHz 0.5 1.0 s

Csat

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 5 A
Collector current peak value - 10 A
Base current (DC) - - A
Base current peak value - - A
Total power dissipation Tmb 25 - 50 W
Storage temperature -55 150
Junction temperature - 150

= 0V - 1500 V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector cut-off current V

Collector-emitter sustaining voltage IB = 0A; I

Collector-emitter saturation voltages IC = 4.0A; IB = 1.0A - 5.0 V
Base-emitter satuation voltage IC = 4.0A; IB = 1.0A - 1.5 V
DC current gain IC = 0.5A; V
Diode forward voltage - - V
Transition frequency at f = 5MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V

Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time I

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

= 0V; V

VBE = 0V; VCE = V

= 125

T

= V

CESMmax

- 1.0 mA

- 2.0 mA

= 100mA - V

L = 25mH

= 5V 8

= 5V 2 - MHz

= 10V 80 - pF

I

= 4.5A; Lc=1mH; Cfb = 4nF - - s

Csat

= 0.8A; IC = 4.5A ; VCC = 105V

B(end)

0.5 1.0 s