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GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency diode,
primarily for use in horizontal deflection circuites of
colour television receivers
QUICK REFERENCE DATA
TO-3PML
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 2.0A; IB = 0.4A
= 0V
25
1500 V
600 V
3.5 A
7.0 A
50 W
1.5 V
Collector saturation current f = 16KHz - A
Diode forward voltage I
= 2.0A 2.0 V
Fall time IC=2A,IB1=-IB2=0.4A,VCC=140V 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 3.5 A
Collector current peak value - 7.0 A
Base current (DC) - 1.5 A
Base current peak value - 3 A
Total power dissipation Tmb 25 - 50 W
Storage temperature -55 150
Junction temperature - 150
= 0V - 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 2.0A; IB = 0.4A - 1.5 V
Base-emitter satuation voltage IC = 2.0A; IB = 0.4A - 2.0 V
DC current gain IC = 1A; V
Diode forward voltage IF = 2.0A 2.0 V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=2A,IB1=-IB2=0.4A,VCC=140V
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V 100 pF
IC=2A,IB1=-IB2=0.4A,VCC=140V 4.5 s
= V
CESMmax
- 0.5 mA
- 1.0 mA
= 100mA - V
= 5V 8 30
= 10V 3 MHz
1.0 s