GENERAL DESCRIPTION
SILICON NPN DARLINGTON TRANSISTOR
Darington transistor are designed for use as
general purpose amplifiers, switching and motor
control applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation T
Collector-emitter saturation voltage IC = 4.0A; IB = 0.04A
Collector saturation current f=16KHZ A
Diode forward voltage IF=3A 2.5 5 V
Fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V 6.0 s
= 0V
25
TO-220F
600 V
400 V
6 A
12 A
25 W
2.0 V
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 6 A
Collector current peak value - 12 A
Base current (DC) - 1 A
Base current peak value - 2 A
Total power dissipation Tmb 25 - 25 W
Storage temperature -55 150
Junction temperature - 150
= 0V - 600 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector cut-off current V
Collector-emitter sustaining voltage IB=0A,IC=100mA V
Collector-emitter saturation voltages IC = 4.0A; IB = 0.04A 2.0 V
Base-emitter satuation voltage IC = 4.0A; IB = 0.04A 1.5 V
DC current gain IC = 2A; V
Diode forward voltage IF=3A 2.5 5.0 V
Transition frequency at f = 1MHz IC=2A,V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
=0V,V
VEB=0V,VCE=V
=125
T
L=25mH
= 50V 50 pF
IC=4.0A,IB1=-IB2=0.04A,VCC=100V 10 s
0.5 mA
CESMmax
= 5V 600
=10V 5 MHz
3.0 mA
6.0 s