Wing Shing Electronic Co manufacturer of power semiconductors 2SD1403 Datasheet

GENERAL DESCRIPTION

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j

2SD1403

Silicon Diffused Power Transistor

Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim­arily for use in horizontal deflection circuites of colour
television re ceiv ers

QUICK REFERENCE DATA

MT-100

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
I
V
t

CESM

CEO
C
CM

tot

CEsat
csat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC =4.0A; IB = 1.0A
Collector saturation current f = 16KHz - - A
Diode for war d vol ta ge IF = 5.0A 1.6 2.0 V
Fall time I

= 5.0A; f = 16KHz 0.4 - s

Csat

-

-

-

-

-

-

1500 V

600 V

6A

12 A

120 W

5.0 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
I
I
I
I
P
T
T

CESM

CEO
C
CM
B
BM

tot

st

Collector-emitter voltage peak value VBE = 0V - 1500 V
Collector-emitter voltage (open base) - 600 V
Collector current (DC) - 6 A
Collector current peak value - 12 A
Base current (DC) - - A
Base current peak value - - A
Total power dissipation Tmb 25 -120W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CE

I

CES

V

CEOsust

V

CEsat

V

BEsat

h

FE

V

F

f

T

C

c

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector cut-off current VBE = 0V; VCE = V

Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V

Collector-emitter saturation voltages IC = 4.0A; IB = 1.0A - 5.0 V
Base-emitter satuation voltage IC = 4.0A; IB = 1.0A - 1.1 V
DC current gain IC = 1.0A; VCE = 5V 8
Diode for war d vol ta ge IF = 5.0A 1.6 2.0 V
Transition frequency at f = 5MHz IC = 0.1A; VCE = 10V 2 - MHz
Collector capacitance at f = 1MHz VCB = 10V 100 - pF

Switching times(16KHz line deflecton circuit)
Turn-off stor age ti me Turn-off fall time I

-1.0mA

-2.0mA

VBE = 0V; VCE = V

= 125

T

j

CESMmax

CESMmax

L = 25mH

I

= 5.0A; Lc=1mH; Cfb = 4nF - - s

Csat

=1.0A; IC = 5.0A ; VCC = 105V

B(end)

0.4 1.0 s