Wing Shing Electronic Co manufacturer of power semiconductors 2SD1265 Datasheet

2SD1265 NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT

SC-67

! ABSOLUTE MAXIMUM RATINGS (TA=25℃℃℃℃)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipat ion (Tc=25
Junction Temperature
Storage Temperature

℃)

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

Tstg

60
60

5
4

30

150

-50~150

V
V
V
A

W

℃℃℃℃

℃℃℃℃

ELECTRICAL CHARACTERISTICS (TA=25℃℃℃℃)

Characteristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product

I

V

CBO

I

EBO

h

FE1

CE(sat)

f

T

VCB= 150V , IE=0

= 5V , IC=

EB

V
VCE= 3.0V ,IC=-1.0A

=3A ,IB=-0.3mA

C

I

= -10V ,IC=-0.5A

CE

V

0

10

70

60

10

240

1.0

µ

A

µ

A

V
MHZ

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