Wing Shing Electronic Co manufacturer of power semiconductors 2SD1088 Datasheet

GENERAL DESCRIPTION

V

-

CEO

C

C

M

tot

CEsat

F

f

V

V

V

I

I

P

T

T

I

I

V

V

h

h

C

t

t

tf

2SD1088

SILICON NPN TRIPLE DIFFUSED TRANSISTOR

High voltage switching application.
Igniter application.

TO-220

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V

V
I
I
P
V
V
t

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage
Diode forward voltage IF = 4.5A V
Fall time I

= 4.5A; f = 16KHz - s

Csat

-

-

-

-

-

300 V
250 V

6 A

30 W

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 300 V
Collector-emitter voltage (open base) - 250 V
Emitter-base oltage (open colloctor)
Collector current (DC) - 6 A
Base current (DC) - 1 A
Total power dissipation Tmb 25 - 30 W
Storage temperature -55 150
Junction temperature - 150

A

V

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-base cut-off current VCB =300V; VE =0 - 0.5 mA
Emitter-base cut-off current VEB =5V, Ic =0 - 0.5 mA
Collector-emitter breakdown voltage Ic =0.5A, L=40mH 250 V
Collector-emitter saturation voltages IC = 4A; IB = 0.04A - 2..0 V
DC current gain IC = 4A, VCE = 2V 200
DC current gain IC = 2A; VCE = 2V 2000 ­Collector capacitance at f = 1MHz VCB = 10V - pF
On times 1 us
Tum-off storage time 8 us
Fall time 5 us

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