Wing Shing Electronic Co manufacturer of power semiconductors 2SC4596E Datasheet

2SC4596E

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SILICON EPITAXIAL PLANNAR TRANSISTOR

GENERAL DESCRIPTION

High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 2A; IB = 0.2A
Emitter forward voltage IE = 2A 1.5 V
Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 s

TO-220F

100 V

60 V

5 A

25 W

1.5 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 100 V
Collector-emitter voltage (open base) - 60 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 5 A
Base current (DC) - 1 A
Total power dissipation Tmb 25 - 25 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V 0.1 mA
Collector-emitter breakdown voltage IC=1mA 60 V
Collector-emitter saturation voltages IC =2A; I
DC current gain IC =1A; V
Transition frequency at f = 30MHz IC =0.5A; VCE = 10V 120 MHz
Collector capacitance at f = 1MHz V
On times IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us
Tum-off storage time IC=2A,IB1=-IB2=0.2A,VCC=30V 1.5 us
Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

=100V 0.1 mA

= 10V 80 pF

= 0.2A 1.5 V

= 5V 100 200